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M36W216BI85ZA6T

STMicroelectronics

M36W216BI85ZA6T by STMicroelectronics

M36W216BI85ZA6T from STMicroelectronics is a low-profile, asynchronous mixed memory IC featuring 16Mbit density with Flash+SRAM technology. It operates b/w -40 °C to 85 °C and supports a supply voltage of 2.7V to 3.3V. Ideal for industrial applications requiring compact memory solutions.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,782 parts In-Stock

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Digiode

USA . 4,230 parts In-Stock

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4,230

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Anansix

USA . 498 parts In-Stock

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498

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,162 parts In-Stock

1+ parts

$2.473

100+ parts

-

1k+ parts

$2.226

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2,162

$2.473

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$2.226

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MKK Technologies

India . 1,333 parts In-Stock

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$4.650

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1,333

$4.650

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DigiPath Technology Company

USA . 1,333 parts In-Stock

1+ parts

$4.650

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1,333

$4.650

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Corphita

USA . 3,098 parts In-Stock

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3,098

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Parana Technologies

USA . 943 parts In-Stock

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$2.957

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943

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$2.957

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Overview

Unlock unparalleled performance with the M36W216BI85ZA6T from STMicroelectronics, a trusted leader in innovative memory solutions. This advanced memory IC combines Flash and SRAM technologies, offering exceptional reliability for diverse applications in industrial automation, consumer electronics, and telecommunications. With its low-profile design and robust temperature range, it ensures seamless operation in demanding environments, delivering superior value and efficiency that empowers your projects to thrive.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides durability and protection, making the IC reliable in various applications.

Surface Mount: YES

Surface mount technology allows for compact design and efficient assembly on circuit boards.

Package Shape: RECTANGULAR

Rectangular packages optimize board space and enable easy placement in tight layouts.

Operating Mode: ASYNCHRONOUS

Asynchronous operation simplifies system design and improves response times for applications.

Mixed Memory Type: FLASH+SRAM

Combining FLASH and SRAM offers versatility, allowing for both fast access and non-volatile storage.

Nominal Supply Voltage / Vsup: 3 V

A nominal supply voltage of 3 V ensures compatibility with a wide range of devices and reduces power consumption.

Power Supplies (V): 3

The IC is designed to operate efficiently with a standard power supply, making it easier to integrate into existing systems.

No. of Terminals: 66

66 terminals provide ample connectivity options for enhanced functionality in complex applications.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

This package style supports high-density designs and can be used in space-constrained environments.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this IC is suitable for industrial and demanding environments.

Organization: 1MX16

The 1MX16 organization allows efficient data handling and processing for various applications.

Minimum Operating Temperature: -40 °C

A wide temperature range ensures reliable operation in extreme conditions, making it ideal for industrial use.

Terminal Finish: Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

This terminal finish provides excellent conductivity and resistance to corrosion, enhancing the IC's longevity.

Terminal Position: BOTTOM

Bottom terminal positioning allows for better thermal performance and space optimization on the PCB.

Maximum Seated Height: 1.4 mm

Low profile design at 1.4 mm minimizes space usage, making it great for compact electronic designs.

Width: 8 mm

A width of 8 mm provides a balance between functionality and space efficiency.

Minimum Supply Voltage (Vsup): 2.7 V

This low minimum supply voltage adds flexibility in power management and compatibility with various systems.

Length: 12 mm

Compact length of 12 mm allows for integration in small devices without compromising functionality.

Temperature Grade: INDUSTRIAL

Designed for industrial applications, ensuring reliability and performance in critical environments.

Technology: CMOS

CMOS technology allows for high performance with low power consumption, ideal for battery-operated devices.

Terminal Form: BALL

Ball terminal form increases solder joint reliability and facilitates easier mounting on PCBs.

Maximum Supply Current: 20 mA

With a maximum supply current of 20 mA, the IC is energy-efficient, allowing longer battery life in portable applications.

No. of Words: 1048576 words

The ability to handle over a million words enables complex data processing and storage capabilities.

Memory Width: 16

A memory width of 16 bits allows for larger data handling, improving overall system performance.

Terminal Pitch: 0.8 mm

A 0.8 mm terminal pitch allows for fine pitch applications, suitable for high-density boards.

No. of Words Code: 1M

With a memory capacity of 1M words, this IC can efficiently manage substantial datasets.

Maximum Supply Voltage (Vsup): 3.3 V

Supports a standard maximum supply voltage of 3.3 V, ensuring compatibility with a broad range of devices.

Memory Density: 16777216 bit

High memory density indicates substantial data storage capability, making it suitable for demanding applications.

Memory IC Type: MEMORY CIRCUIT

As a dedicated memory circuit, this IC is optimized for data storage and retrieval, enhancing system performance.

Maximum Standby Current: 0.00001 Amp

Extremely low standby current contributes to energy efficiency, especially in battery-powered applications.

Maximum Access Time: 85 ns

Fast access time of 85 ns enhances the speed of data retrieval, improving system responsiveness.

Technical Specifications

Other Function Memory ICs M36W216BI85ZA6T attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

85 ns

Additional Features:

STATIC RAM ORGANISED AS 128KBIT X 16

JESD-30 Code:

R-PBGA-B66

JESD-609 Code:

e1

Length:

12 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

66

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA66,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.00001 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.3 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36W216BI85ZA6T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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