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M36W0R5020B0ZAQF

STMicroelectronics

M36W0R5020B0ZAQF by STMicroelectronics

M36W0R5020B0ZAQF by STMicroelectronics is a mixed memory IC featuring 2M x 16 organization with Flash+SRAM technology. It operates asynchronously at a nominal voltage of 1.8V, suitable for industrial applications. With a max temp of 85 °C and low power consumption, it ensures reliability in demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,800 parts In-Stock

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4,800

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Anansix

USA . 2,769 parts In-Stock

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2,769

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Vyrian

USA . 236 parts In-Stock

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236

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 841 parts In-Stock

1+ parts

$4.279

100+ parts

-

1k+ parts

$3.851

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841

$4.279

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$3.851

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MKK Technologies

India . 706 parts In-Stock

1+ parts

$8.046

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706

$8.046

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DigiPath Technology Company

USA . 706 parts In-Stock

1+ parts

$8.046

100+ parts

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706

$8.046

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Corphita

USA . 4,317 parts In-Stock

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4,317

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Parana Technologies

USA . 1,473 parts In-Stock

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$5.116

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1,473

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$5.116

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Overview

Unlock unparalleled performance with the M36W0R5020B0ZAQF from STMicroelectronics, a trusted leader in innovative memory solutions. This versatile flash and SRAM memory IC delivers exceptional reliability for demanding applications, ensuring seamless operation even in extreme temperatures. Experience power efficiency and compact design, making it perfect for industrial automation, consumer electronics, and IoT devices. Elevate your projects with ST's proven quality and cutting-edge technology, designed to drive success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides durability and resistance to environmental stress, ensuring reliability in various applications.

Surface Mount: YES

Being surface mount technology (SMT) enables compact design and easier integration into modern electronic circuits.

Package Shape: RECTANGULAR

Rectangular packages are efficient for space management on PCBs, allowing for higher density and better layout flexibility.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for simpler timing with fewer constraints, making it easier to integrate into various systems.

Mixed Memory Type: FLASH+SRAM

The combination of FLASH and SRAM provides both non-volatile storage and fast data access, catering to a wide range of applications.

Nominal Supply Voltage / Vsup: 1.8V

The low nominal supply voltage supports low power consumption, making it suitable for battery-operated devices.

Power Supplies: 1.8V

Operating at 1.8V ensures lower energy consumption, extending battery life for portable applications.

No. of Terminals: 88

A higher number of terminals provides flexibility for various connections, enhancing the versatility of the IC.

Package Style: GRID ARRAY, THIN PROFILE, FINE PITCH

Thin profile and fine pitch design improve the overall space efficiency and enable high-density mounting on PCBs.

Maximum Operating Temperature: 85 °C

Operating at higher temperatures ensures reliability in industrial environments where heat may be a concern.

Organization: 2Mx16

2Mx16 organization indicates a well-structured memory layout, optimizing data retrieval and processing speed.

Minimum Operating Temperature: -40 °C

This temperature range allows the IC to function reliably in extreme conditions, suitable for outdoor or industrial applications.

Terminal Finish: TIN SILVER COPPER

The terminal finish enhances solderability and ensures better connectivity, increasing the longevity of the product.

Terminal Position: BOTTOM

Bottom terminal positioning allows for easier placement on PCBs, which is advantageous in compact designs.

Maximum Seated Height: 1.2mm

A low seated height facilitates thin profile designs, contributing to lightweight and compact electronics.

Width: 8mm

An 8mm width supports effective space utilization in compact electronic assemblies.

Minimum Supply Voltage: 1.7V

A minimum supply voltage of 1.7V allows for stable operation in low-power applications.

Length: 10mm

The 10mm length makes this IC suitable for various modular designs without compromising overall layout integrity.

Temperature Grade: INDUSTRIAL

Industrial temperature grading ensures the IC meets rigorous standards for performance in demanding environments.

Technology: CMOS

CMOS technology enhances performance and power efficiency, making it ideal for a wide range of applications.

Terminal Form: BALL

Ball terminals ensure better mechanical stability and improve electrical connection reliability.

Maximum Supply Current: 45 mA

A maximum supply current of 45 mA provides a good range for performance while maintaining low power usage.

No. of Words: 2,097,152 words

This sizable word capacity allows for substantial data storage, meeting various application needs.

Memory Width: 16

A memory width of 16 bits enables faster data processing and greater throughput for applications requiring high data rates.

Terminal Pitch: 0.8mm

A 0.8mm terminal pitch allows for compact designs and high-density packaging without compromising on reliability.

No. of Words Code: 2M

The 2M word capacity indicates a solid storage capability for applications requiring significant memory resources.

Maximum Supply Voltage: 1.95V

Supporting a maximum supply voltage of 1.95V enhances versatility for various power supply configurations.

Memory Density: 33,554,432 bit

A high memory density allows for storage of substantial amounts of data in a compact footprint.

Memory IC Type: MEMORY CIRCUIT

Classified as a memory circuit, this IC is optimized for efficient data storage and retrieval, suitable for multiple applications.

Maximum Standby Current: 0.00005 Amp

Extremely low standby current contributes to energy efficiency, ideal for battery-powered and energy-sensitive applications.

Maximum Access Time: 70 ns

A maximum access time of 70 ns supports quick data retrieval, crucial for performance-critical applications.

Technical Specifications

Other Function Memory ICs M36W0R5020B0ZAQF attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

SRAM IS ORGANIZED AS 256K X 16

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00005 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

45 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36W0R5020B0ZAQF Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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