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TMS2150-35NT

Texas Instruments

TMS2150-35NT by Texas Instruments

TMS2150-35NT by Texas Instruments is a 512x9 MEMORY CIRCUIT IC with 35ns access time, ideal for commercial applications. It operates at 5V, has a max standby current of 0.145A, and comes in an IN-LINE package style. With MOS technology and through-hole terminals, it offers reliable performance in a compact rectangular plastic/epoxy body.

Median Price

$19.600

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

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Forefront Electronics and Design

USA . 71 parts In-Stock

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Digiode

USA . 4,339 parts In-Stock

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Vyrian

USA . 3,596 parts In-Stock

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ECAB

Sweden . 1,017 parts In-Stock

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MRC Electronics

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Standard Data Resources

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Connector Distribution Corp

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Right Parts Inc.

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Electronic Expediters

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Q Components

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Mentor Electronics Marketing, LLC

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Distributors (Availability)

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Parana Technologies

USA . 2,256 parts In-Stock

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$4.725

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$5.219

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One Stop Electronics

USA . 265 parts In-Stock

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$5.000

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DigiPath Technology Company

USA . 1,374 parts In-Stock

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ChromeModa Solutions

Germany . 2,707 parts In-Stock

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$4.353

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IDEA Electronic Components Group

UK . 435 parts In-Stock

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AZTECH Wire

Italy . 323 parts In-Stock

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Corphita

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Overview

Looking for high-quality memory ICs that offer reliable performance and versatility? Look no further than the TMS2150-35NT by Texas Instruments. With a reputation for excellence in manufacturing, Texas Instruments provides cutting-edge technology that meets the demands of various applications. The TMS2150-35NT offers customers exceptional value with its fast access time of 35 ns, low standby current of 0.145 Amp, and wide memory width of 9 words. Whether you're in need of memory circuits for industrial, automotive, or consumer electronics, this product delivers the reliability and efficiency you're looking for. Trust Texas Instruments to provide the solutions you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material which ensures long-lasting performance and easy handling.

Nominal Supply Voltage / Vsup: 5V

Standard supply voltage, making it compatible with a wide range of systems and applications.

No. of Terminals: 24

Sufficient number of terminals for connectivity and data transfer.

Maximum Operating Temperature: 70°C

Capable of operating under moderate temperature conditions without compromising performance.

Organization: 512X9

Organized memory layout for efficient data storage and retrieval.

Technology: MOS

Utilizes Metal-Oxide-Semiconductor technology for reliable and efficient operation.

Terminal Form: THROUGH-HOLE

Through-hole terminals for secure connections and ease of installation.

No. of Words: 512 words

Ample storage capacity for data and information.

Maximum Access Time: 35 ns

Fast access time for quick data retrieval and processing.

Technical Specifications

Other Function Memory ICs TMS2150-35NT attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

35 ns

JESD-30 Code:

R-PDIP-T24

Memory IC Type:

Memory Width:

9

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X9

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP24,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.145 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

145 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS2150-35NT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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