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TMS2501JC

Texas Instruments

TMS2501JC by Texas Instruments

TMS2501JC by Texas Instruments is a MOS memory circuit IC with 24 terminals in an in-line rectangular ceramic package. It operates b/w -25°C to 85°C, making it suitable for various applications requiring reliable memory storage and retrieval. Its through-hole terminal form and 2.54mm pitch enhance ease of integration into electronic systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,543 parts In-Stock

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3,543

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Digiode

USA . 3,254 parts In-Stock

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3,254

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,173 parts In-Stock

1+ parts

$3.794

100+ parts

-

1k+ parts

$4.283

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1,173

$3.794

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$4.283

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DigiPath Technology Company

USA . 1,099 parts In-Stock

1+ parts

$4.178

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1,099

$4.178

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ChromeModa Solutions

Germany . 2,696 parts In-Stock

1+ parts

$4.263

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$3.496

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2,696

$4.263

$3.496

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IDEA Electronic Components Group

UK . 1,674 parts In-Stock

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$4.263

100+ parts

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$3.837

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1,674

$4.263

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$3.837

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One Stop Electronics

USA . 1,422 parts In-Stock

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$5.000

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1,422

$5.000

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AZTECH Wire

Italy . 556 parts In-Stock

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$19.736

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556

$19.736

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Corphita

USA . 3,370 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the TMS2501JC by Texas Instruments. Known for their high-quality products, Texas Instruments delivers trusted solutions in the category of Other Function Memory ICs. This versatile memory circuit offers a wide range of applications and is designed to operate flawlessly in various environments. With a durable ceramic package and innovative MOS technology, customers can trust in the reliability and performance of this product. Experience seamless functionality and exceptional value with the TMS2501JC - the perfect choice for your memory circuit needs.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic provides better thermal conductivity and electrical insulation, making it suitable for high temperature applications.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration into circuit boards and efficient use of space.

No. of Terminals: 24

Having 24 terminals allows for a higher level of connectivity and functionality within the memory circuit.

Package Style (Meter): IN-LINE

The in-line package style facilitates easy installation and maintenance of the memory IC.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this memory IC can be used in a wide range of environmental conditions.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature ensures reliability and performance even in cold environments.

Terminal Position: DUAL

Dual terminal position provides redundancy and increases the reliability of the memory IC.

Technology: MOS

MOS technology offers low power consumption and high speed performance, making this memory IC energy efficient.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer mechanical strength and stability, ensuring secure connections within the memory circuit.

Terminal Pitch: 2.54 mm

A standard terminal pitch of 2.54mm allows for easy soldering and integration with common circuit board designs.

Memory IC Type: MEMORY CIRCUIT

Being a memory circuit IC, this product is specifically designed for storing and retrieving data efficiently in electronic systems.

Technical Specifications

Other Function Memory ICs TMS2501JC attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-XDIP-T24

Memory IC Type:

No. of Terminals:

24

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Sub-Category:

Other Memory ICs

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS2501JC Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

NSN

5962-01-026-6081, 5962010266081

NIIN

010266081

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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