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TMS2150-45JD

Texas Instruments

TMS2150-45JD by Texas Instruments

TMS2150-45JD by Texas Instruments is a 512x9 MEMORY CIRCUIT IC with 45ns access time, 135mA max supply current, and 5V nominal voltage. It is ideal for commercial applications requiring fast memory operations in a ceramic rectangular package with 24 terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Vyrian

USA . 5,961 parts In-Stock

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Digiode

USA . 1,513 parts In-Stock

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Electronic Expediters

USA . 100 parts In-Stock

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100

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 100 parts In-Stock

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100

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Q Components

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Prism Electronics

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Parana Technologies

USA . 1,088 parts In-Stock

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$4.692

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$5.177

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DigiPath Technology Company

USA . 293 parts In-Stock

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$5.167

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293

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ChromeModa Solutions

Germany . 3,543 parts In-Stock

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$5.272

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$4.323

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IDEA Electronic Components Group

UK . 848 parts In-Stock

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$5.272

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$4.745

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848

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$4.745

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AZTECH Wire

Italy . 405 parts In-Stock

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$9.686

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One Stop Electronics

USA . 779 parts In-Stock

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$26.000

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Corphita

USA . 2,201 parts In-Stock

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Perfect Parts

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A-Plus Industry Inc.

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Overview

Enhance your electronic designs with the TMS2150-45JD by Texas Instruments. Made with top-quality ceramic materials, this memory circuit offers reliability and performance. Ideal for a variety of applications, this IC provides seamless integration into your projects. With a nominal supply voltage of 5V and a maximum access time of 45ns, this product delivers optimal efficiency and speed. Trust Texas Instruments to provide cutting-edge technology that meets your needs. Upgrade your systems with the TMS2150-45JD today and experience the difference in quality and innovation.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides excellent thermal conductivity and high temperature resistance, making the product durable and reliable in various operating conditions.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard supply voltage of 5V makes it compatible with many different systems and easy to integrate into existing setups.

No. of Terminals: 24

Having a sufficient number of terminals allows for flexible connections and easy installation, enhancing usability and versatility.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature of 70°C, the product can function reliably in demanding environments without overheating.

Technology: MOS

Utilizing MOS technology ensures efficient operation and low power consumption, making the product energy-efficient and suitable for battery-powered applications.

Memory Width: 9

The wide memory width of 9 bits allows for storing and accessing larger amounts of data at once, improving overall performance and speed.

Technical Specifications

Other Function Memory ICs TMS2150-45JD attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

45 ns

JESD-30 Code:

R-XDIP-T24

Memory IC Type:

Memory Width:

9

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X9

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.135 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

135 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS2150-45JD Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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