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MTFC16GLTDV-WT

Micron Technology

MTFC16GLTDV-WT by Micron Technology

MTFC16GLTDV-WT by Micron Technology is a memory IC with 137.4TB density, operating at -25 to 85°C. It features 169 terminals in a grid array package for surface mounting applications. Suitable for various electronic devices requiring high-density memory solutions.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 21,100 parts In-Stock

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Vyrian

USA . 4,765 parts In-Stock

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Digiode

USA . 923 parts In-Stock

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923

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Corohmni

South Africa . 284 parts In-Stock

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$2.379

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284

$2.379

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Aztec Data Supply Inc.

USA . 2,752 parts In-Stock

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$5.298

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AZTECH Wire

Italy . 375 parts In-Stock

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$14.233

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Ampacity Inc.

Singapore . 1,140 parts In-Stock

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$29.000

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$29.000

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Corphita

USA . 2,052 parts In-Stock

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Argo Parts USA

USA . 1,366 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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500

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Microchip USA

USA . 203 parts In-Stock

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Continental Prestige Electronics

USA . 80 parts In-Stock

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Overview

Elevate your device's performance with the MTFC16GLTDV-WT by Micron Technology. Known for their superior quality and cutting-edge technology, Micron Technology delivers exceptional memory ICs for a variety of applications. This memory IC boasts reliability, speed, and efficiency, making it a valuable investment for customers seeking top-notch performance. Upgrade your device today with the MTFC16GLTDV-WT and experience the difference Micron Technology brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material is lightweight and durable, making this product ideal for applications where weight and reliability are important factors.

Surface Mount: YES

Surface mount technology simplifies the assembly process and allows for higher component densities on PCBs, making this product suitable for compact electronic devices.

Package Shape: RECTANGULAR

Rectangular shape is commonly used and easy to handle during the manufacturing process, ensuring compatibility with standard equipment and procedures.

Power Supplies (V): 1.8/3.3,3/3.3

Supports multiple voltage options, providing flexibility in design and compatibility with different power supply configurations.

No. of Terminals: 169

High number of terminals allow for versatile connections and functionality, making this product suitable for complex circuit designs.

Package Style (Meter): GRID ARRAY, FINE PITCH

Grid array with fine pitch offers high density packaging and shorter signal paths, improving performance and reliability in high-speed applications.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures reliable performance in harsh environments or under heavy loads, making this product suitable for industrial applications.

Minimum Operating Temperature: -25 °C

Low minimum operating temperature allows for operation in cold climates or refrigerated conditions, expanding the range of potential applications for this product.

Terminal Position: BOTTOM

Bottom terminal position offers better thermal management and signal integrity, enhancing overall performance and reliability of the product.

Terminal Form: BALL

Ball terminals provide reliable electrical connections and easier rework, ensuring a robust and efficient assembly process for the product.

Terminal Pitch: 0.5 mm

Fine terminal pitch allows for high-density connections and precise routing, enabling more complex circuit designs and compact PCB layouts.

Memory Density: 137438953472 bit

High memory density provides ample storage capacity for data-intensive applications, making this product suitable for memory-intensive tasks or large-scale data processing.

Technical Specifications

Other Function Memory ICs MTFC16GLTDV-WT attributes and parameters. Explore more Other Function Memory ICs devices from Micron Technology

Specs

JESD-30 Code:

R-PBGA-B169

Memory Density:

137438953472 bit

No. of Terminals:

169

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA169,14X28,20

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Power Supplies (V):

1.8/3.3,3/3.3

Qualification:

Not Qualified

Sub-Category:

Other Memory ICs

Surface Mount:

YES

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Trade Compliance

MTFC16GLTDV-WT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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