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MTFC32GLTDM-WT

Micron Technology

MTFC32GLTDM-WT by Micron Technology

MTFC32GLTDM-WT by Micron Technology is a memory IC with 274877906944 bit density. It operates at temperatures from -25 to 85 °C and has 153 terminals in a square package shape. Ideal for applications requiring power supplies of 1.8/3.3,3/3.3 V and surface mount compatibility.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 1,590 parts In-Stock

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1,590

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Digiode

USA . 562 parts In-Stock

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Nova Conductors

Japan . 33 parts In-Stock

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33

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 2,161 parts In-Stock

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$2.640

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$2.640

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Corohmni

South Africa . 184 parts In-Stock

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$3.945

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184

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Ampacity Inc.

Singapore . 796 parts In-Stock

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$12.000

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796

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AZTECH Wire

Italy . 511 parts In-Stock

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$13.887

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Continental Prestige Electronics

USA . 5,021 parts In-Stock

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Argo Parts USA

USA . 2,987 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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500

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Corphita

USA . 295 parts In-Stock

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295

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Microchip USA

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Overview

Elevate your device's performance with the MTFC32GLTDM-WT by Micron Technology - a top-quality memory IC that delivers unparalleled reliability and speed. As a leading manufacturer in the industry, Micron Technology ensures cutting-edge technology and superior craftsmanship in every product they produce. This memory IC is perfect for a variety of applications, providing seamless functionality and efficiency. Experience the value and benefits of this product firsthand, as it enhances the overall performance of your devices, making it a must-have for customers seeking high-quality memory solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ideal for portable and electronic devices.

Surface Mount: YES

Surface mount capability makes installation easy and efficient, saving time and effort during assembly.

Package Shape: SQUARE

The square package shape allows for efficient use of space on circuit boards, maximizing functionality in a compact design.

Power Supplies (V): 1.8/3.3, 3/3.3

Support for multiple power supply voltages provides flexibility in integration with different systems, ensuring compatibility and reliability.

No. of Terminals: 153

The high number of terminals allows for a wide range of connections and interfaces, enabling versatile usage in various applications.

Package Style (Meter): GRID ARRAY, FINE PITCH

The grid array and fine pitch package style enhances signal integrity and performance, critical for high-speed data processing and communication.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this product can withstand demanding operating conditions, ensuring reliability in diverse environments.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature ensures functionality even in cold environments, making this product suitable for a wide range of applications.

Terminal Position: BOTTOM

The bottom terminal position simplifies installation and maintenance, enhancing user convenience and ease of use.

Terminal Form: BALL

The ball terminal form provides reliable connections and reduces the risk of signal loss or interference, ensuring stable performance.

Terminal Pitch: 0.5 mm

The small terminal pitch allows for high-density mounting, maximizing the use of available space on the circuit board and enhancing overall efficiency.

Memory Density: 274877906944 bit

With a high memory density, this product offers ample storage capacity for data processing and storage requirements in advanced applications.

Technical Specifications

Other Function Memory ICs MTFC32GLTDM-WT attributes and parameters. Explore more Other Function Memory ICs devices from Micron Technology

Specs

JESD-30 Code:

S-PBGA-B153

Memory Density:

274877906944 bit

No. of Terminals:

153

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA153,14X14,20

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Power Supplies (V):

1.8/3.3,3/3.3

Qualification:

Not Qualified

Sub-Category:

Other Memory ICs

Surface Mount:

YES

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Trade Compliance

MTFC32GLTDM-WT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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