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M36W216B85ZA6

STMicroelectronics

M36W216B85ZA6 by STMicroelectronics

M36W216B85ZA6 from STMicroelectronics is a low-profile, asynchronous memory IC with a 3V nominal voltage and operates b/w -40 °C to 85 °C. It features a 1M x 16 organization and comes in a compact rectangular package. Ideal for industrial applications requiring reliable data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,950 parts In-Stock

1+ parts

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4,950

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Anansix

USA . 1,333 parts In-Stock

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1,333

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Vyrian

USA . 250 parts In-Stock

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250

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,220 parts In-Stock

1+ parts

$3.682

100+ parts

-

1k+ parts

$3.314

10k+ parts

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1,220

$3.682

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$3.314

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MKK Technologies

India . 1,581 parts In-Stock

1+ parts

$6.923

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1,581

$6.923

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DigiPath Technology Company

USA . 1,581 parts In-Stock

1+ parts

$6.923

100+ parts

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1,581

$6.923

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Corphita

USA . 3,247 parts In-Stock

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3,247

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Parana Technologies

USA . 1,506 parts In-Stock

1+ parts

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$4.402

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1,506

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$4.402

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Overview

Unlock unparalleled performance with the M36W216B85ZA6 from STMicroelectronics, a leader in high-quality semiconductor solutions. Designed for superior efficiency and reliability, this low-profile memory IC excels in diverse applications—from industrial automation to advanced consumer electronics. With its robust temperature range and asynchronous operation, it promises exceptional data integrity and longevity, empowering your innovations while enhancing system performance and reducing power consumption. Elevate your projects with STMicroelectronics' commitment to excellence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Using durable plastic/epoxy material ensures the IC is robust and suitable for various environmental conditions.

Surface Mount: YES

Surface mount technology allows for a compact design, making it ideal for space-constrained applications.

Package Shape: RECTANGULAR

The rectangular shape promotes efficient use of board space and integrates well into diverse layouts.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for ease of integration into systems where timing is flexible, enhancing performance.

Nominal Supply Voltage / Vsup (V): 3

A nominal supply voltage of 3V is compatible with a wide range of modern devices, ensuring versatility.

No. of Terminals: 66

With 66 terminals, the IC can support complex connections, providing greater functionality.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

The low-profile fine pitch grid array offers reduced height, facilitating designs where space is at a premium.

Maximum Operating Temperature: 85 °C

The ability to operate up to 85 °C ensures reliability in industrial environments where heat may be an issue.

Organization: 1MX16

The 1MX16 organization indicates a balance of density and access speed, catering to a range of applications.

Minimum Operating Temperature: -40 °C

Capability to function at -40 °C makes this IC suitable for harsh environments, expanding its application range.

Terminal Position: BOTTOM

Bottom terminal positioning allows for better soldering and connection options on PCBs, enhancing assembly efficiency.

Maximum Seated Height: 1.4 mm

A maximum seated height of 1.4 mm is advantageous for low-profile designs, accommodating slim form factors.

Width: 8 mm

The 8 mm width provides a compact footprint, making this memory IC suitable for portable devices.

Minimum Supply Voltage (Vsup): 2.7 V

A minimum supply voltage of 2.7V allows for operation in lower voltage environments, increasing energy efficiency.

Length: 12 mm

At 12 mm long, this IC fits into various compact configurations, making it versatile for different applications.

Temperature Grade: INDUSTRIAL

Industrial temperature grading indicates reliable performance for critical applications, ensuring durability over time.

Technology: CMOS

CMOS technology offers low power consumption and high speed, crucial for modern high-performance devices.

Terminal Form: BALL

Ball terminal form allows for easier soldering and stress relief, which enhances durability and performance.

No. of Words: 1,048,576 words

Having 1M words ensures ample memory capacity for applications requiring significant data storage.

Memory Width: 16

With a memory width of 16 bits, this IC supports high-speed data processing, enhancing overall system performance.

Terminal Pitch: 0.8 mm

The 0.8 mm terminal pitch enables high-density PCB designs, crucial for modern electronic applications.

No. of Words Code: 1M

The 1M words code indicates a robust storage capability, making it ideal for data-intensive applications.

Maximum Supply Voltage (Vsup): 3.3 V

A maximum supply voltage of 3.3V ensures compatibility with most digital circuits, enhancing its adaptability.

Memory Density: 16,777,216 bit

With a memory density of 16M bits, this IC can handle demanding applications, providing extensive data processing capabilities.

Memory IC Type: MEMORY CIRCUIT

Being a memory circuit type indicates its primary function in data storage, which is essential for various electronic applications.

Technical Specifications

Other Function Memory ICs M36W216B85ZA6 attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

ALSO CONTAINS 128K X 16 SRAM

JESD-30 Code:

R-PBGA-B66

Length:

12 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

66

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Supply Voltage (Vsup):

3.3 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36W216B85ZA6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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