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MR0A08BYS35R

Everspin Technologies

MR0A08BYS35R by Everspin Technologies

MR0A08BYS35R by Everspin Technologies is a 128KX8 memory circuit with a CMOS technology. It operates asynchronously at a nominal voltage of 3.3V and has a max access time of 35ns. This memory IC is commonly used in applications that require high-speed data storage and retrieval.

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Overview

Discover the MR0A08BYS35R, a high-quality memory circuit IC manufactured by Everspin Technologies. This innovative product belongs to the Other Function Memory ICs category and offers numerous advantages for various applications. With its small outline and thin profile package style, it provides customers with exceptional value and benefits. Boasting a wide operating temperature range, low power consumption, and reliable performance, this memory IC is the perfect solution for your electronic projects. Experience the advantages of Everspin Technologies' cutting-edge technology and unlock the full potential of your applications with the MR0A08BYS35R.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection for the memory IC, making it a reliable choice.

Surface Mount: YES

Being surface mountable allows for easy installation and integration of the memory IC into various electronic devices, enhancing its versatility.

No. of Functions: 1

With a single function, this memory IC simplifies the system design, reducing complexity and enhancing overall efficiency.

Package Shape: RECTANGULAR

The rectangular shape of the package provides compatibility with standard mounting techniques, facilitating seamless integration into electronic circuits.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for flexible and independent data transfer, making it well-suited for applications requiring asynchronous operations.

Nominal Supply Voltage / Vsup (V): 3.3

The nominal supply voltage of 3.3V ensures stable and efficient power delivery, contributing to the reliable performance of the memory IC.

Power Supplies (V): 3.3

With power supplies operating at 3.3V, this memory IC can be easily incorporated into existing systems, eliminating the need for additional voltage conversions.

No. of Terminals: 44

The 44 terminals offer sufficient connectivity options, enabling seamless integration into a wide range of electronic circuits.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline and thin profile of the package make it suitable for space-constrained applications, providing flexibility in design.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this memory IC can withstand demanding thermal conditions, ensuring reliable operation in various environments.

Organization: 128KX8

The organization of 128KX8 allows for storing and accessing a large amount of data efficiently, making it ideal for memory-intensive applications.

Minimum Operating Temperature: 0 °C

The minimum operating temperature of 0°C ensures that the memory IC performs reliably even in colder environments.

Terminal Position: DUAL

The dual terminal position provides flexibility in PCB layout, making it easier to route traces and enhance the overall design efficiency.

Maximum Seated Height: 1.2 mm

With a maximum seated height of 1.2mm, this memory IC is suitable for compact designs without compromising reliability.

Width: 10.16 mm

The width of 10.16mm allows for efficient space utilization, making it suitable for applications with size constraints.

Minimum Supply Voltage (Vsup): 3 V

The minimum supply voltage of 3V allows for compatibility with a wide range of power sources, increasing the versatility of the memory IC.

Length: 18.41 mm

The length of 18.41mm enables seamless integration, even in applications with limited available space.

Temperature Grade: COMMERCIAL

Designed for commercial use, this memory IC meets industry standards and reliability requirements, making it a suitable choice for a wide range of applications.

Technology: CMOS

Built using CMOS technology, this memory IC offers low power consumption, high noise immunity, and enhanced reliability, making it an optimal choice for various electronic systems.

Terminal Form: GULL WING

The gull wing terminal form ensures ease of soldering and robust electrical connections, enhancing the overall reliability of the memory IC.

Maximum Supply Current: 65 mA

With a maximum supply current of 65mA, this memory IC operates efficiently, minimizing power consumption and enhancing energy efficiency.

No. of Words: 131072 words

The capacity to store 131072 words allows for the efficient storage of a large volume of data, making it suitable for data-intensive applications.

Memory Width: 8

With a memory width of 8 bits, this memory IC facilitates efficient storage and retrieval of data, enhancing performance in applications demanding high-speed data handling.

Terminal Pitch: 0.8 mm

The terminal pitch of 0.8mm enables high-density packaging and integration of the memory IC, making it suitable for applications requiring a compact design.

No. of Words Code: 128K

The encoding of 128K words offers ample memory capacity, allowing for efficient storage and retrieval of large volumes of data.

Moisture Sensitivity Level (MSL): 3

Having a moisture sensitivity level of 3 ensures a stable and reliable operation of the memory IC even in moderate humidity conditions.

Maximum Supply Voltage (Vsup): 3.6 V

With a maximum supply voltage of 3.6V, this memory IC can handle higher voltage signals, providing improved operational flexibility.

Memory Density: 1048576 bit

The high memory density of 1048576 bits enables efficient storage of a significant amount of data, making it suitable for memory-demanding applications.

Memory IC Type: MEMORY CIRCUIT

Being a memory circuit, this IC specializes in storing and retrieving digital information efficiently, making it an ideal choice for memory-related applications.

Maximum Standby Current: 0.007 Amp

With a maximum standby current of 0.007 Amp, this memory IC minimizes power consumption during idle periods, enhancing overall energy efficiency.

Maximum Access Time: 35 ns

The maximum access time of 35ns ensures quick retrieval and transmission of data, improving system responsiveness and performance.

Technical Specifications

Other Function Memory ICs MR0A08BYS35R attributes and parameters. Explore more Other Function Memory ICs devices from Everspin Technologies

Specs

Maximum Access Time:

35 ns

JESD-30 Code:

R-PDSO-G44

Length:

18.41 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

44

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP44,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.007 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

65 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

MR0A08BYS35R Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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