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M36W108T120ZM5

STMicroelectronics

M36W108T120ZM5 by STMicroelectronics

M36W108T120ZM5 from STMicroelectronics is a low-profile, asynchronous mixed memory IC featuring 1M x 8 organization with Flash+SRAM technology. It operates b/w -20 °C to 85°C and supports power supplies of 2.7V to 3.6V. Ideal for compact applications requiring efficient data storage and retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,601 parts In-Stock

1+ parts

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2,601

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Digiode

USA . 1,643 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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1,643

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Vyrian

USA . 1,558 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,558

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,700 parts In-Stock

1+ parts

$3.536

100+ parts

-

1k+ parts

$3.183

10k+ parts

-

1,700

$3.536

-

$3.183

-

MKK Technologies

India . 1,131 parts In-Stock

1+ parts

$6.650

100+ parts

-

1k+ parts

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10k+ parts

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1,131

$6.650

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DigiPath Technology Company

USA . 1,131 parts In-Stock

1+ parts

$6.650

100+ parts

-

1k+ parts

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10k+ parts

-

1,131

$6.650

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-

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Parana Technologies

USA . 1,327 parts In-Stock

1+ parts

-

100+ parts

$4.228

1k+ parts

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1,327

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$4.228

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Corphita

USA . 622 parts In-Stock

1+ parts

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622

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Overview

Unlock new possibilities with the M36W108T120ZM5 from STMicroelectronics, a leader in innovative semiconductor solutions. This high-performance memory IC seamlessly blends FLASH and SRAM technologies, ensuring rapid data access and efficiency for your applications. Designed for versatility and reliability, it operates smoothly under various conditions, making it perfect for everything from consumer electronics to industrial systems. Experience enhanced performance, reduced power consumption, and superior quality backed by ST's trusted expertise—your ideal partner in advancing technology!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and cost-effectiveness, making the memory IC suitable for a variety of applications.

Surface Mount: YES

Surface mount technology allows for compact designs and easier integration into modern electronics.

Package Shape: RECTANGULAR

The rectangular shape optimizes space utilization on circuit boards, facilitating efficient layout designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enables faster data access, making it ideal for applications that require quick response times.

Mixed Memory Type: FLASH+SRAM

Combining FLASH and SRAM offers a versatile memory solution suitable for a wide range of applications, balancing speed and non-volatile storage.

Power Supplies (V): 3/3.3

Compatible with both 3V and 3.3V power supplies, enhancing flexibility in design choices.

No. of Terminals: 48

A higher number of terminals allows for more connections, supporting complex configurations and functionalities.

Package Style (Meter): GRID ARRAY, LOW PROFILE

Grid array packages allow for improved thermal management and are suitable for high-density applications.

Maximum Operating Temperature: 85 °C

With a max temperature rating of 85 °C, this IC can operate in demanding environments, ensuring reliability.

Organization: 1MX8

The memory organization of 1MX8 provides ample data storage with efficient access, suitable for various embedded applications.

Minimum Operating Temperature: -20 °C

Operating in low temperatures makes this IC reliable in cold environments or applications, extending its usability.

Terminal Finish: TIN LEAD

Tin-lead finishes ensure good bonding and conductivity, enhancing the overall reliability of the connections.

Terminal Position: BOTTOM

Bottom-terminal positioning simplifies PCB layout and improves assembly efficiency.

Maximum Seated Height: 1.35 mm

A low profile of 1.35 mm is advantageous for compact designs, allowing more flexibility in available space.

Width: 9.8 mm

The width of 9.8 mm is suitable for various layout designs, ensuring compatibility with most PCB dimensions.

Minimum Supply Voltage (Vsup): 2.7 V

Lower supply voltage requirement allows for compatibility with a wider range of power management systems.

Length: 11.8 mm

A length of 11.8 mm contributes to a compact design, making it favorable for space-constrained applications.

Technology: CMOS

CMOS technology offers low power consumption, making this memory IC suitable for battery-operated devices.

Terminal Form: BALL

Ball terminals provide enhanced mechanical stability and better electrical performance in surface mount configurations.

Maximum Supply Current: 100 mA

With a maximum supply current of 100 mA, this IC can provide reliable performance under typical operational conditions.

No. of Words: 1048576 words

With over 1 million words of storage, this memory IC is capable of handling substantial data volumes.

Memory Width: 8

An 8-bit memory width aligns with standard data processing requirements, enhancing compatibility with digital systems.

Terminal Pitch: 1 mm

A terminal pitch of 1 mm allows for efficient use of space on the PCB while ensuring robust connections.

No. of Words Code: 1M

1M word memory supports a broad spectrum of applications, ensuring adequate capacity for various tasks.

Maximum Supply Voltage (Vsup): 3.6 V

Supporting up to 3.6 V power supplies increases design flexibility, accommodating a wide range of power options.

Memory Density: 8388608 bit

High memory density provides ample storage for complex applications, making it a great choice for embedded systems.

Memory IC Type: MEMORY CIRCUIT

Designed explicitly as a memory circuit, it is optimized for efficient data storage and retrieval.

Maximum Standby Current: 0.00002 Amp

Extremely low standby current minimizes power consumption in idle state, beneficial for battery-operated applications.

Maximum Access Time: 120 ns

Fast maximum access time of 120 ns ensures quick data retrieval, enhancing overall system performance.

Technical Specifications

Other Function Memory ICs M36W108T120ZM5 attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

120 ns

Additional Features:

ALSO CONTAINS 128K X 8 SRAM

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e0

Length:

11.8 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

8

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Organization:

1MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.35 mm

Maximum Standby Current:

.00002 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

100 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

9.8 mm

Trade Compliance

M36W108T120ZM5 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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