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M36W108B120ZN6T

STMicroelectronics

M36W108B120ZN6T by STMicroelectronics

M36W108B120ZN6T by STMicroelectronics is a 1MX8 memory IC with 8388608 bit memory density. It operates in asynchronous mode with CMOS technology, suitable for industrial applications. This rectangular package has 48 terminals, measures 11.8mm x 9.8mm, and supports supply voltage from 2.7V to 3.6V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,804 parts In-Stock

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4,804

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Digiode

USA . 2,531 parts In-Stock

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2,531

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Anansix

USA . 1,485 parts In-Stock

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1,485

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 463 parts In-Stock

1+ parts

$2.773

100+ parts

-

1k+ parts

$2.496

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463

$2.773

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$2.496

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MKK Technologies

India . 1,284 parts In-Stock

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$5.214

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1,284

$5.214

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DigiPath Technology Company

USA . 1,284 parts In-Stock

1+ parts

$5.214

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1,284

$5.214

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Corphita

USA . 2,072 parts In-Stock

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2,072

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Parana Technologies

USA . 580 parts In-Stock

1+ parts

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$3.315

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580

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$3.315

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Overview

Unlock the power of innovation with the M36W108B120ZN6T memory IC by STMicroelectronics. Designed for industrial applications, this high-quality product offers a wide range of benefits such as reliable performance, low power consumption, and a compact form factor. Ideal for various functions, this memory IC is a game-changer in the industry. Trust STMicroelectronics to deliver cutting-edge solutions that exceed expectations and drive success in your projects. Experience the difference with the M36W108B120ZN6T memory IC today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ensuring it can withstand daily wear and tear.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation, making it suitable for mass production and automated assembly processes.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode enables the memory IC to operate independently of a clock signal, providing flexibility and reliability in data transmission.

No. of Terminals: 48

With a high number of terminals, the memory IC can support complex connectivity requirements and enhance data transfer speeds.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature range ensures the memory IC can perform reliably even in challenging environments with elevated temperatures.

Organization: 1MX8

The 1MX8 organization indicates a high memory capacity and data storage capability, making it suitable for applications requiring large amounts of data processing.

Minimum Supply Voltage (Vsup): 2.7 V

The low minimum supply voltage requirement allows for energy-efficient operation and extends the battery life of devices using the memory IC.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures the memory IC can operate reliably in harsh industrial environments with wide temperature fluctuations.

Memory Density: 8388608 bit

The high memory density enables the storage of a large amount of data in a compact form factor, making the memory IC ideal for space-constrained applications.

Memory IC Type: MEMORY CIRCUIT

The memory circuit type indicates that the IC is specifically designed for memory storage and retrieval tasks, ensuring efficient and reliable data handling.

Technical Specifications

Other Function Memory ICs M36W108B120ZN6T attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

ALSO CONTAINS 128K X 8 SRAM

JESD-30 Code:

R-PBGA-B48

Length:

11.8 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BUTT

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

9.8 mm

Trade Compliance

M36W108B120ZN6T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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