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M36W0R6040B0ZAQF

STMicroelectronics

M36W0R6040B0ZAQF by STMicroelectronics

M36W0R6040B0ZAQF from STMicroelectronics is a mixed memory IC featuring 4M x 16 organization with Flash+PSRAM technology. It operates asynchronously at a nominal voltage of 1.8V, supporting temperatures from -30 °C to 85 °C. Ideal for compact applications, it has a thin profile grid array package with low power consumption.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,744 parts In-Stock

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3,744

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Anansix

USA . 2,544 parts In-Stock

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2,544

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Vyrian

USA . 895 parts In-Stock

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895

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 232 parts In-Stock

1+ parts

$4.837

100+ parts

-

1k+ parts

$4.354

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232

$4.837

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$4.354

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MKK Technologies

India . 1,285 parts In-Stock

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$9.096

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1,285

$9.096

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DigiPath Technology Company

USA . 1,285 parts In-Stock

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$9.096

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1,285

$9.096

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A-Z Elektronik GmbH

Germany . 7,319 parts In-Stock

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7,319

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Corphita

USA . 4,995 parts In-Stock

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4,995

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Alle Elektronik GmbH

Germany . 4,879 parts In-Stock

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4,879

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Parana Technologies

USA . 303 parts In-Stock

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$5.784

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303

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$5.784

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Overview

Unlock the power of innovation with the M36W0R6040B0ZAQF from STMicroelectronics—your go-to solution for advanced memory needs. This versatile FLASH+PSRAM combination delivers exceptional performance in a compact package, ideal for a range of applications from consumer electronics to automotive systems. With ST's renowned quality and reliability, you can trust this memory IC to enhance efficiency while reducing power consumption, ensuring your projects thrive with superior speed and dependability!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and protects the IC from environmental factors.

Surface Mount: YES

Surface mount technology allows for efficient use of PCB space and supports automated assembly.

Package Shape: RECTANGULAR

The rectangular shape facilitates optimal layout and space utilization on the printed circuit board.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enables flexible timing in data transfer, making it ideal for diverse applications.

Mixed Memory Type: FLASH+PSRAM

Combining FLASH and PSRAM offers a versatile memory solution, suitable for a variety of applications.

Nominal Supply Voltage / Vsup (V): 1.8

A nominal supply voltage of 1.8V ensures low power consumption, essential for battery-operated devices.

Power Supplies (V): 1.8

Operating at a standard voltage of 1.8V simplifies circuit design and integration with other components.

No. of Terminals: 88

With 88 terminals, this IC offers ample connectivity options for complex designs.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The thin profile and fine pitch of the grid array facilitate high-density mounting, saving space.

Maximum Operating Temperature: 85 °C

A high maximum operating temperature ensures reliable performance in demanding environments.

Organization: 4MX16

The memory organization provides an efficient structure for data management and access.

Minimum Operating Temperature: -30 °C

A wide temperature range allows this IC to function effectively in varied climatic conditions.

Terminal Finish: TIN SILVER COPPER

The tin-silver-copper finish enhances solderability and reliability of the connections.

Terminal Position: BOTTOM

Bottom terminal positioning allows for easier board layout and minimized signal delay.

Maximum Seated Height: 1.2 mm

A low seated height aids in compact designs and minimizes the overall profile of the assembly.

Width: 8 mm

An 8 mm width makes this IC suitable for small form factor applications.

Minimum Supply Voltage (Vsup): 1.7 V

The minimum supply voltage provides flexibility in power supply choices for different applications.

Length: 10 mm

The 10 mm length complements the compact design approach and facilitates integration into smaller devices.

Technology: CMOS

CMOS technology ensures low power consumption and high speed, ideal for modern applications.

Terminal Form: BALL

Ball terminal form enhances electrical performance and thermal conductivity.

Maximum Supply Current: 45 mA

A maximum supply current of 45 mA allows for efficient power use in active applications.

No. of Words: 4194304 words

A substantial capacity of over 4 million words provides ample storage for complex data sets.

Memory Width: 16

With a memory width of 16 bits, this IC supports high-speed data access and transfer rates.

Terminal Pitch: 0.8 mm

A 0.8 mm terminal pitch is common in modern electronics, making this IC compatible with numerous applications.

No. of Words Code: 4M

The 4M words code indicates significant memory capacity, suitable for storing detailed information.

Maximum Supply Voltage (Vsup): 1.95 V

A maximum supply voltage of 1.95V ensures operational efficiency while covering a range of applications.

Memory Density: 67108864 bit

High memory density maximizes data storage capabilities within a compact footprint.

Memory IC Type: MEMORY CIRCUIT

As a memory circuit, this IC is optimized specifically for efficient data storage and retrieval.

Maximum Standby Current: 0.00011 Amp

Extremely low standby current minimizes power consumption when the device is inactive.

Maximum Access Time: 70 ns

Fast access time of 70 ns enhances system performance and efficiency in processing tasks.

Technical Specifications

Other Function Memory ICs M36W0R6040B0ZAQF attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

PSRAM IS ORGANIZED AS 1M X 16

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Organization:

4MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00011 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

45 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36W0R6040B0ZAQF Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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