Loading...

M36W0R6030T0ZAQE

STMicroelectronics

M36W0R6030T0ZAQE by STMicroelectronics

M36W0R6030T0ZAQE by STMicroelectronics is a versatile memory IC featuring 4M x 16 organization, operating at a nominal voltage of 1.8V. It combines FLASH and SRAM technologies for efficient data storage in industrial applications. With a max temp of 85 °C and access time of 70ns, it ensures reliable performance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 5,340 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,340

-

-

-

-

Vyrian

USA . 3,949 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,949

-

-

-

-

Anansix

USA . 2,288 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,288

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,077 parts In-Stock

1+ parts

$4.616

100+ parts

-

1k+ parts

$4.154

10k+ parts

-

2,077

$4.616

-

$4.154

-

MKK Technologies

India . 1,738 parts In-Stock

1+ parts

$8.679

100+ parts

-

1k+ parts

-

10k+ parts

-

1,738

$8.679

-

-

-

DigiPath Technology Company

USA . 1,738 parts In-Stock

1+ parts

$8.679

100+ parts

-

1k+ parts

-

10k+ parts

-

1,738

$8.679

-

-

-

Parana Technologies

USA . 1,670 parts In-Stock

1+ parts

-

100+ parts

$5.519

1k+ parts

-

10k+ parts

-

1,670

-

$5.519

-

-

Corphita

USA . 1,604 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,604

-

-

-

-

Overview

Unlock unparalleled performance with the M36W0R6030T0ZAQE from STMicroelectronics, a leader in innovative memory solutions. This high-quality FLASH+SRAM memory IC enhances efficiency and reliability across various applications, from industrial automation to consumer devices. With its low power consumption and robust design, it delivers exceptional value, enabling cutting-edge technology while ensuring durability in any environment. Choose STMicroelectronics for superior products that drive your success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy helps to enhance durability and protect the memory IC from environmental factors.

Surface Mount: YES

Surface mount technology allows for a more compact design, making this memory IC ideal for space-constrained applications.

Package Shape: RECTANGULAR

A rectangular package shape optimizes layout and improves the efficiency of PCB design.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for simpler integration, making it easier for designers to implement in various applications.

Mixed Memory Type: FLASH+SRAM

Combining FLASH and SRAM technology offers flexibility and improves performance for a wide range of applications.

Nominal Supply Voltage / Vsup: 1.8 V

The low nominal supply voltage makes this memory IC energy-efficient, reducing power consumption in battery-operated devices.

Power Supplies (V): 1.8

A single power supply of 1.8V simplifies design and reduces the number of required components.

No. of Terminals: 88

A higher number of terminals enables more functionalities and connectivity options within your design.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

This package style supports high-density assembly, making it suitable for advanced electronic applications.

Maximum Operating Temperature: 85 °C

The ability to operate at high temperatures makes this IC suitable for harsh environments and industrial applications.

Organization: 4MX16

The memory organization provides a good balance of density and speed, enhancing performance for various applications.

Minimum Operating Temperature: -40 °C

With a wide operating temperature range, this memory IC is suitable for outdoor and industrial applications.

Terminal Finish: TIN SILVER COPPER

The tin-silver-copper finish ensures good solderability and improves longevity and reliability in connections.

Terminal Position: BOTTOM

Bottom-terminated components are beneficial for thermal performance and can reduce signal path length.

Maximum Seated Height: 1.2 mm

A thin profile allows for compact designs, making it ideal for portable and space-sensitive electronic devices.

Width: 8 mm

A slim width supports integration into tight spaces on PCBs, providing flexibility for designers.

Minimum Supply Voltage (Vsup): 1.7 V

A low minimum supply voltage enhances device performance and lowers the likelihood of damage during power fluctuations.

Length: 10 mm

Compact dimensions make this IC suitable for miniaturized devices while maximizing performance.

Temperature Grade: INDUSTRIAL

Designed for industrial use, this IC is built to withstand rigorous operating conditions, ensuring reliability.

Technology: CMOS

CMOS technology allows for low power consumption and high noise immunity, which is critical for reliable memory operations.

Terminal Form: BALL

Ball terminal form facilitates easier soldering and improves connection stability in high-density applications.

Maximum Supply Current: 45 mA

Offers a good balance of power requirements, making it suitable for various applications without overloading the system.

No. of Words: 4,194,304 words

This high word count provides ample storage, making it ideal for data-intensive applications or firmware storage.

Memory Width: 16

A 16-bit memory width enhances data throughput, which is beneficial for applications requiring fast data access.

Terminal Pitch: 0.8 mm

A fine terminal pitch allows for a compact design and efficient use of space on the PCB.

No. of Words Code: 4M

The 4M word code indicates the memory capacity, suitable for a range of applications from consumer to industrial.

Maximum Supply Voltage (Vsup): 1.95 V

A higher maximum supply voltage allows for flexibility in power supply designs without compromising performance.

Memory Density: 67,108,864 bit

With a high memory density, this IC can store large amounts of data, ideal for applications that require extensive memory.

Memory IC Type: MEMORY CIRCUIT

Designed as a dedicated memory circuit, it ensures optimized performance and reliability for memory-related tasks.

Maximum Standby Current: 0.00001 Amp

Extremely low standby current helps to conserve battery life in portable devices, enhancing overall efficiency.

Maximum Access Time: 70 ns

A maximum access time of 70 ns indicates rapid data retrieval, improving system responsiveness in real-time applications.

Technical Specifications

Other Function Memory ICs M36W0R6030T0ZAQE attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

SRAM IS ORGANIZED AS 512K X 16

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00001 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

45 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36W0R6030T0ZAQE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20