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M36W0R6030T0ZAQT

STMicroelectronics

M36W0R6030T0ZAQT by STMicroelectronics

M36W0R6030T0ZAQT by STMicroelectronics is a versatile memory IC featuring 4M x 16 organization, operating at a nominal voltage of 1.8V. It supports asynchronous access with a max access time of 70ns and operates in industrial conditions from -40 °C to 85 °C. Ideal for applications requiring mixed FLASH+SRAM memory in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,941 parts In-Stock

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Vyrian

USA . 1,444 parts In-Stock

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1,444

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Anansix

USA . 1,161 parts In-Stock

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1,161

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 887 parts In-Stock

1+ parts

$2.965

100+ parts

-

1k+ parts

$2.669

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887

$2.965

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$2.669

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MKK Technologies

India . 744 parts In-Stock

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$5.576

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744

$5.576

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DigiPath Technology Company

USA . 744 parts In-Stock

1+ parts

$5.576

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744

$5.576

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Corphita

USA . 3,569 parts In-Stock

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3,569

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Parana Technologies

USA . 903 parts In-Stock

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$3.545

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903

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$3.545

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Overview

Unlock unparalleled performance with the M36W0R6030T0ZAQT from STMicroelectronics, a leader in innovative memory solutions. This advanced hybrid FLASH+SRAM memory IC is designed for efficiency and reliability in demanding applications, from industrial automation to consumer electronics. With its compact size and low power consumption, customers can optimize their designs while enjoying longevity and high-speed access, ensuring seamless operation in any environment. Experience quality you can trust!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures reliability and protection against environmental factors, making it suitable for a variety of applications.

Surface Mount: YES

Surface mount compatibility allows for easier assembly and reduces the footprint on the PCB, facilitating compact designs.

Package Shape: RECTANGULAR

The rectangular package shape provides a standard form factor that is widely accepted in design, simplifying integration into existing systems.

Operating Mode: ASYNCHRONOUS

An asynchronous operating mode delivers faster data processing, enabling improved performance for real-time applications.

Mixed Memory Type: FLASH+SRAM

The combination of FLASH and SRAM offers flexibility for both data storage and quick access, optimizing performance for various use cases.

Nominal Supply Voltage / Vsup (V): 1.8

A nominal supply voltage of 1.8V promotes energy efficiency, which is crucial for battery-powered devices and reduces overall power consumption.

Power Supplies (V): 1.8

Supporting a 1.8V power supply aligns with modern low-voltage standards, ensuring compatibility with a wide range of electronics.

No. of Terminals: 88

Having 88 terminals allows for extensive connectivity options, making it adaptable for various applications requiring multiple data lines.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The thin profile and fine pitch grid array design enable high-density integration, making it ideal for space-constrained applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, it suits industrial environments that require reliable performance under higher thermal conditions.

Organization: 4MX16

The 4M x 16 organization provides a good balance of capacity and access speed, making it suitable for a variety of applications.

Minimum Operating Temperature: -40 °C

A minimum operating temperature of -40 °C ensures functionality in extreme cold environments, enhancing versatility and durability.

Terminal Finish: TIN LEAD

The tin lead finish offers excellent solderability and reliability during installation, ensuring stable connections within the circuit.

Terminal Position: BOTTOM

Bottom terminal positioning facilitates efficient surface mounting, contributing to design flexibility and ease of integration.

Maximum Seated Height: 1.2 mm

A maximum seated height of 1.2 mm allows for low-profile designs, crucial for compact electronic devices.

Width: 8 mm

At 8 mm wide, the size supports versatile design possibilities and fits into various electronic setups without bulky modifications.

Minimum Supply Voltage (Vsup): 1.7 V

The minimum supply voltage of 1.7V enhances compatibility with low-power systems, extending battery life and reducing energy costs.

Length: 10 mm

With a length of 10 mm, the device can easily fit into compact layouts while still allowing for ample interconnectivity.

Temperature Grade: INDUSTRIAL

Rated for industrial temperature ranges, this product is designed for robust performance and longevity in demanding environments.

Technology: CMOS

CMOS technology allows for lower power consumption combined with high-speed operation, making it suitable for modern applications.

Terminal Form: BALL

Ball terminal form enables easy soldering and improves reliability in surface-mounted designs, reducing the risk of mechanical failures.

Maximum Supply Current: 45 mA

A maximum supply current of 45 mA ensures adequate power for operations, making it suitable for high-demand applications without overheating.

No. of Words: 4194304 words

Offering 4,194,304 words of memory, this device provides a substantial data capacity for applications requiring extensive storage.

Memory Width: 16

The 16-bit memory width supports high-speed data transfers, enhancing overall system efficiency.

Terminal Pitch: 0.8 mm

A terminal pitch of 0.8 mm allows for higher density layouts while ensuring reliable connections in tighter spaces.

No. of Words Code: 4M

The 4M word code offers a sufficient code length for various applications, ensuring efficient data storage and access.

Maximum Supply Voltage (Vsup): 1.95 V

A maximum supply voltage of 1.95V provides flexibility in power supply options, ensuring compatibility with a variety of systems.

Memory Density: 67108864 bit

With a memory density of 67,108,864 bits, this IC provides ample storage capacity for complex applications and data processing.

Memory IC Type: MEMORY CIRCUIT

As a memory circuit with advanced capabilities, it is ideal for applications ranging from consumer electronics to industrial systems.

Maximum Standby Current: 0.00001 Amp

The ultra-low maximum standby current of 0.00001 A enhances power efficiency, especially for battery-operated devices.

Maximum Access Time: 70 ns

With a maximum access time of 70 ns, the product ensures rapid data retrieval, crucial for applications needing swift responses.

Technical Specifications

Other Function Memory ICs M36W0R6030T0ZAQT attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

SRAM IS ORGANIZED AS 512K X 16

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e0

Length:

10 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00001 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

45 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36W0R6030T0ZAQT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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