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TMS2150-55NT

Texas Instruments

TMS2150-55NT by Texas Instruments

TMS2150-55NT by Texas Instruments is a 512x9 MEMORY CIRCUIT IC with 55ns access time, 135mA max supply current, and 5V nominal voltage. It is used in applications requiring fast memory access and low power consumption.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,773 parts In-Stock

1+ parts

-

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6,773

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Digiode

USA . 3,617 parts In-Stock

1+ parts

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3,617

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,485 parts In-Stock

1+ parts

$3.358

100+ parts

-

1k+ parts

$3.884

10k+ parts

-

1,485

$3.358

-

$3.884

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DigiPath Technology Company

USA . 1,185 parts In-Stock

1+ parts

$3.698

100+ parts

$3.402

1k+ parts

-

10k+ parts

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1,185

$3.698

$3.402

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ChromeModa Solutions

Germany . 4,778 parts In-Stock

1+ parts

$3.773

100+ parts

$3.094

1k+ parts

-

10k+ parts

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4,778

$3.773

$3.094

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IDEA Electronic Components Group

UK . 1,920 parts In-Stock

1+ parts

$3.773

100+ parts

-

1k+ parts

$3.396

10k+ parts

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1,920

$3.773

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$3.396

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AZTECH Wire

Italy . 790 parts In-Stock

1+ parts

$12.865

100+ parts

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790

$12.865

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One Stop Electronics

USA . 456 parts In-Stock

1+ parts

$27.000

100+ parts

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456

$27.000

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Corphita

USA . 1,518 parts In-Stock

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1,518

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Overview

Experience unparalleled performance and reliability with the TMS2150-55NT by Texas Instruments. As a leader in the industry, Texas Instruments delivers top-quality memory ICs like this one, designed for a wide range of applications. From industrial automation to consumer electronics, this product offers exceptional value with its fast access time, low standby current, and high supply voltage. Trust Texas Instruments to provide cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the TMS2150-55NT and unlock limitless possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this product lightweight and durable, allowing for easy handling and long-lasting performance.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V ensures compatibility with standard power supplies and makes it easy to integrate into existing systems.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature of 70°C ensures reliable performance even in harsh environments or under heavy loads.

Organization: 512X9

The 512x9 organization provides a large memory capacity and data width, making this product suitable for applications that require storage of a significant amount of data.

Technology: MOS

The use of MOS technology ensures fast and efficient operation, making this memory IC suitable for high-speed applications that require quick data access.

Maximum Access Time: 55 ns

The fast maximum access time of 55ns ensures minimal delay in retrieving data, making this memory IC ideal for applications that require quick response times.

Technical Specifications

Other Function Memory ICs TMS2150-55NT attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

55 ns

JESD-30 Code:

R-PDIP-T24

Memory IC Type:

Memory Width:

9

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X9

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP24,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.135 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

135 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS2150-55NT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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