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M36W216TI70ZA1

STMicroelectronics

M36W216TI70ZA1 by STMicroelectronics

M36W216TI70ZA1 from STMicroelectronics is a low-profile, asynchronous mixed memory IC featuring 16Mbit density with Flash+SRAM technology. It operates at a nominal voltage of 3V and supports temperatures up to 70 °C. Ideal for compact applications requiring efficient data storage and retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,348 parts In-Stock

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1,348

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Anansix

USA . 1,097 parts In-Stock

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1,097

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Vyrian

USA . 960 parts In-Stock

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960

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,900 parts In-Stock

1+ parts

$4.350

100+ parts

-

1k+ parts

$3.915

10k+ parts

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1,900

$4.350

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$3.915

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MKK Technologies

India . 1,081 parts In-Stock

1+ parts

$8.179

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1,081

$8.179

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DigiPath Technology Company

USA . 1,081 parts In-Stock

1+ parts

$8.179

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1,081

$8.179

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Corphita

USA . 4,992 parts In-Stock

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4,992

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Parana Technologies

USA . 566 parts In-Stock

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$5.201

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566

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$5.201

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Overview

Unlock unparalleled performance with the M36W216TI70ZA1 from STMicroelectronics, your trusted partner in innovative memory solutions. This advanced FLASH+SRAM memory IC delivers exceptional reliability and efficiency for a wide range of applications, from consumer electronics to industrial systems. With its compact design and low power consumption, it ensures optimal functionality while maximizing space and energy savings. Elevate your projects with this cutting-edge memory solution and experience the difference that quality engineering makes!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and protection against environmental factors, making the IC suitable for various applications.

Surface Mount: YES

Surface mount configuration allows for compact PCB design, enhancing space efficiency in electronic devices.

Package Shape: RECTANGULAR

The rectangular shape aids in easier integration into circuit layouts and optimizes space utilization on PCBs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides flexible timing control, making it ideal for designs that require rapid data access.

Mixed Memory Type: FLASH+SRAM

The combination of FLASH and SRAM allows for both fast data processing and reliable storage, enhancing overall system performance.

Nominal Supply Voltage / Vsup: 3 V

Operating at a nominal voltage of 3V ensures compatibility with a wide range of low-power devices, leading to energy savings.

Power Supplies (V): 3

Having a single power supply requirement simplifies circuit design and reduces the number of components needed.

No. of Terminals: 66

With 66 terminals, the IC offers ample connectivity options, allowing for versatile integration into complex systems.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

This package style supports high-density designs and efficient routing on PCBs, ideal for advanced electronic applications.

Maximum Operating Temperature: 70 °C

Allows the IC to function effectively in high-temperature environments, expanding its applicability in diverse applications.

Organization: 1MX16

This organization offers a balanced data structure for efficient data manipulation and access within memory operations.

Minimum Operating Temperature: 0 °C

A minimum operating temperature of 0 °C ensures reliable operation in moderately cold environments.

Terminal Finish: Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

This finish enhances solderability and reliability of connections, reducing the risk of failure in assembled circuits.

Terminal Position: BOTTOM

Bottom terminal positioning facilitates more compact designs and easier access in multi-layered PCBs.

Maximum Seated Height: 1.4 mm

The low profile design contributes to space-saving in compact devices, accommodating modern design trends.

Width: 8 mm

Width of 8 mm is conducive to fitting into a variety of device sizes while maintaining necessary performance metrics.

Minimum Supply Voltage (Vsup): 2.7 V

The low minimum supply voltage expands the range of compatible devices, enabling use with battery-powered applications.

Length: 12 mm

A length of 12 mm provides adequate space for functionality while supporting compact design strategies in the electronics sector.

Temperature Grade: COMMERCIAL

Designed for commercial applications, ensuring reliability and performance within typical operating conditions.

Technology: CMOS

CMOS technology provides low power consumption and high performance, making the IC suitable for battery-operated devices.

Terminal Form: BALL

Ball terminal form enhances reliability during soldering and ensures better electrical connections within the circuitry.

Maximum Supply Current: 20 mA

A low maximum supply current contributes to energy efficiency, which is critical in battery-sensitive applications.

No. of Words: 1048576 words

With 1M words of storage capacity, this IC supports significant data processing requirements for a wide range of applications.

Memory Width: 16

A memory width of 16 bits improves data throughput and enhances the performance of computing tasks.

Terminal Pitch: 0.8 mm

Fine pitch allows for higher density assembly, catering to modern consumer electronics that demand compact size.

No. of Words Code: 1M

This capacity indicates suitability for various applications requiring memory without the need for excessive size.

Maximum Supply Voltage (Vsup): 3.3 V

Supports applications running on slightly higher voltage, allowing for wider application versatility in different environments.

Memory Density: 16777216 bit

A high memory density makes this IC capable of handling extensive data, beneficial for memory-intensive applications.

Memory IC Type: MEMORY CIRCUIT

Being a memory circuit means it is specifically designed for storage operations, making it ideal for data retention needs.

Maximum Standby Current: 0.00001 Amp

Extremely low standby current minimizes energy waste, an essential feature for energy-efficient electronic designs.

Maximum Access Time: 70 ns

Fast access time ensures quick data retrieval, enhancing the performance of the systems that utilize this IC.

Technical Specifications

Other Function Memory ICs M36W216TI70ZA1 attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

STATIC RAM ORGANISED AS 128KBIT X 16

JESD-30 Code:

R-PBGA-B66

JESD-609 Code:

e1

Length:

12 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

66

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA66,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.00001 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.3 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36W216TI70ZA1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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