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M36W0R6030B0ZAQT

STMicroelectronics

M36W0R6030B0ZAQT by STMicroelectronics

M36W0R6030B0ZAQT from STMicroelectronics is a versatile memory IC featuring 4M x 16 mixed FLASH+SRAM technology. It operates asynchronously with a supply voltage range of 1.7-1.95V and supports industrial applications at temperatures from -40 °C to 85 °C. With a compact design (8x10mm) and low power consumption, it's ideal for space-constrained environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,649 parts In-Stock

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1,649

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Digiode

USA . 778 parts In-Stock

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778

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Anansix

USA . 150 parts In-Stock

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150

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,386 parts In-Stock

1+ parts

$3.732

100+ parts

-

1k+ parts

$3.358

10k+ parts

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1,386

$3.732

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$3.358

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MKK Technologies

India . 425 parts In-Stock

1+ parts

$7.017

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425

$7.017

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DigiPath Technology Company

USA . 425 parts In-Stock

1+ parts

$7.017

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425

$7.017

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Parana Technologies

USA . 2,316 parts In-Stock

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$4.462

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2,316

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$4.462

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Corphita

USA . 57 parts In-Stock

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57

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Overview

Unlock the power of innovation with the M36W0R6030B0ZAQT from STMicroelectronics, a leader in memory solutions. This advanced mixed-memory IC combines Flash and SRAM technology for unparalleled performance and efficiency, making it ideal for industrial applications requiring durability and reliability. Designed for optimal operation between -40 °C to 85 °C, it ensures your devices run smoothly in any environment. Elevate your projects with a trusted partner that prioritizes quality and delivers exceptional value!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable and lightweight material ensures reliability and cost-effectiveness in various applications.

Surface Mount: YES

The surface mount design allows for smaller PCBs and efficient manufacturing processes, making it suitable for compact electronic devices.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on the circuit board, allowing for easier integration into different designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides flexibility in timing control, improving system performance in real-time applications.

Mixed Memory Type: FLASH+SRAM

Combining FLASH and SRAM technologies offers high-speed access alongside non-volatile storage, perfect for data-intensive applications.

Nominal Supply Voltage / Vsup (V): 1.8

The low nominal voltage ensures energy-efficient operation, reducing power consumption and heat generation.

Power Supplies (V): 1.8

Operating on a single 1.8V supply simplifies power management and enables easier compatibility with modern electronic systems.

No. of Terminals: 88

A high number of terminals provides greater connectivity options, enabling complex circuitry and enhanced functionality.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The thin profile and fine pitch of the package style make it ideal for high-density applications in space-constrained environments.

Maximum Operating Temperature: 85 °C

This high maximum temperature rating ensures reliable operation in demanding environments, suitable for industrial applications.

Organization: 4MX16

This memory organization offers efficient data structuring, vital for optimizing access patterns in various applications.

Minimum Operating Temperature: -40 °C

This low operating temperature extends the product’s usability in extreme environments, enhancing versatility.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides excellent solderability and reliability, crucial for long-term performance in electronic devices.

Terminal Position: BOTTOM

Bottom terminal positioning supports compact design while ensuring sturdy mechanical connections to the PCB.

Maximum Seated Height: 1.2 mm

With a low seated height, this component reduces the overall profile of the assembly, aiding in space-saving designs.

Width: 8 mm

A compact width enables efficient use of board space, ideal for high-density electronic designs.

Minimum Supply Voltage (Vsup): 1.7 V

The minimal voltage requirement allows for flexible power supply options and enhances system compatibility.

Length: 10 mm

A manageable length contributes to adaptability in various layouts, accommodating diverse electronic applications.

Temperature Grade: INDUSTRIAL

Rated for industrial temperature ranges, this product is suitable for robust applications requiring reliability over a wide temperature spectrum.

Technology: CMOS

CMOS technology benefits from low power consumption and high noise immunity, ensuring efficient operation and reliability in various conditions.

Terminal Form: BALL

Ball terminal form increases reliability and reduces stress on solder joints, enhancing durability in assembly.

Maximum Supply Current: 45 mA

This current capability supports high performance and power-demanding applications, ensuring responsiveness in critical tasks.

No. of Words: 4194304 words

A large memory capacity allows for the storage of significant data, making it ideal for data-heavy applications.

Memory Width: 16

A 16-bit memory width allows efficient data processing, suiting it for applications requiring high throughput.

Terminal Pitch: 0.8 mm

The fine terminal pitch enables high-density mounting, facilitating compact designs in advanced electronic applications.

No. of Words Code: 4M

This coding allows for optimal data organization, making retrieval and storage efficient for extensive datasets.

Maximum Supply Voltage (Vsup): 1.95 V

The upper voltage limit ensures safe operation within specified parameters, enhancing component longevity.

Memory Density: 67108864 bit

High memory density accommodates sophisticated applications, supporting extensive data storage requirements.

Memory IC Type: MEMORY CIRCUIT

As a dedicated memory IC, it is designed for efficiency and reliability, crucial for data-centric operations.

Maximum Standby Current: 0.00001 Amp

Extremely low standby current minimizes overall power consumption, enhancing energy efficiency during idle times.

Maximum Access Time: 70 ns

A rapid access time improves system responsiveness, essential for applications requiring quick data retrieval.

Technical Specifications

Other Function Memory ICs M36W0R6030B0ZAQT attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

SRAM IS ORGANIZED AS 512K X 16

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e0

Length:

10 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00001 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

45 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36W0R6030B0ZAQT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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