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MR0A08BCYS35R

Everspin Technologies

MR0A08BCYS35R by Everspin Technologies

MR0A08BCYS35R by Everspin Tech: 128KX8 memory IC with 1048576 bit density, operates at 3.3V, and has a max access time of 35 ns. Ideal for industrial applications requiring fast asynchronous memory operations in a compact small outline package.

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2

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1k+

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Vyrian

USA . 3,601 parts In-Stock

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Nova Conductors

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Aztec Data Supply Inc.

USA . 469 parts In-Stock

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$3.168

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AZTECH Wire

Italy . 515 parts In-Stock

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Component Stockers USA

USA . 478 parts In-Stock

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$201.680

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QUARKTWIN TECHNOLOGY LTD

USA . 21,309 parts In-Stock

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Argo Parts USA

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Continental Prestige Electronics

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Aranea Global

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Overview

Everspin Technologies' MR0A08BCYS35R offers unparalleled quality and reliability in the realm of Other Function Memory ICs. With a focus on innovation, Everspin Technologies has created a product that exceeds industry standards and provides customers with unmatched value. Ideal for a variety of applications, this memory circuit boasts a wide range of benefits and advantages, making it the perfect choice for those seeking top-notch performance and efficiency without compromising on quality. Elevate your projects with Everspin Technologies' cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers durability and protection for the memory IC, making it reliable for long-term use.

Nominal Supply Voltage / Vsup (V): 3.3

Stable voltage supply ensures consistent performance of the memory IC.

Operating Mode: ASYNCHRONOUS

Allows for independent operation, increasing flexibility in system design.

Memory Density: 1048576 bit

High memory density allows for storing a large amount of data efficiently.

Maximum Access Time: 35 ns

Fast access time ensures quick retrieval of data, enhancing overall system performance.

Technical Specifications

Other Function Memory ICs MR0A08BCYS35R attributes and parameters. Explore more Other Function Memory ICs devices from Everspin Technologies

Specs

Maximum Access Time:

35 ns

JESD-30 Code:

R-PDSO-G44

Length:

18.41 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

44

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP44,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.007 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

70 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

MR0A08BCYS35R Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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