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SN74AS8834GB

Texas Instruments

SN74AS8834GB by Texas Instruments

SN74AS8834GB by Texas Instruments is a 64x40 memory circuit IC with 2560-bit memory density. Operating at 5V, it features synchronous mode and TTL technology. Ideal for commercial applications, this square-shaped IC has a grid array package style and operates b/w 0°C to 70°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,811 parts In-Stock

1+ parts

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5,811

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Digiode

USA . 4,857 parts In-Stock

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4,857

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,910 parts In-Stock

1+ parts

$3.507

100+ parts

-

1k+ parts

$4.032

10k+ parts

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1,910

$3.507

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$4.032

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DigiPath Technology Company

USA . 1,251 parts In-Stock

1+ parts

$3.862

100+ parts

$3.553

1k+ parts

-

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1,251

$3.862

$3.553

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ChromeModa Solutions

Germany . 6,995 parts In-Stock

1+ parts

$3.941

100+ parts

$3.232

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6,995

$3.941

$3.232

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IDEA Electronic Components Group

UK . 1,436 parts In-Stock

1+ parts

$3.941

100+ parts

-

1k+ parts

$3.547

10k+ parts

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1,436

$3.941

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$3.547

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AZTECH Wire

Italy . 628 parts In-Stock

1+ parts

$7.860

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628

$7.860

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One Stop Electronics

USA . 1,397 parts In-Stock

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$9.000

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1,397

$9.000

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Corphita

USA . 3,524 parts In-Stock

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3,524

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Overview

Unlock the power of reliable memory solutions with the SN74AS8834GB by Texas Instruments. Designed with cutting-edge technology, this quality memory circuit offers unrivaled performance and durability for a wide range of applications. Whether you're in the automotive, industrial, or consumer electronics industry, this memory IC provides seamless operation and efficiency. Trust in Texas Instruments' reputation for excellence and invest in the SN74AS8834GB for unmatched value and peace of mind. Elevate your products with this innovative solution today.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed cofired materials ensures high durability and reliability, making this memory IC suitable for harsh operating conditions.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise and coordinated data transfer, enhancing overall performance and efficiency of the memory IC.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V ensures compatibility with a wide range of systems and applications.

No. of Terminals: 156

The high number of terminals allows for complex connectivity and functionality, making this memory IC suitable for advanced applications.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this memory IC can function reliably in environments with elevated temperatures.

Technology: TTL

Utilizing TTL technology ensures fast and reliable data processing, making this memory IC a high-performance choice for various tasks.

Memory Density: 2560 bit

The high memory density of 2560 bits allows for storing large amounts of data in a compact form, making this memory IC efficient in space utilization.

Technical Specifications

Other Function Memory ICs SN74AS8834GB attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-CPGA-P156

Memory Density:

2560 bit

Memory IC Type:

Memory Width:

40

No. of Functions:

1

No. of Terminals:

156

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64X40

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

PGA

Package Equivalence Code:

PGA156M,15X15MOD

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

2,5

Qualification:

Not Qualified

Sub-Category:

Other Memory ICs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

PIN/PEG

Terminal Pitch:

2.54 mm

Terminal Position:

PERPENDICULAR

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SN74AS8834GB Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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