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TACT2152-25FN

Texas Instruments

TACT2152-25FN by Texas Instruments

TACT2152-25FN by Texas Instruments is a 2Kx8 memory circuit IC with 16384-bit memory density. It operates at a max access time of 25ns and has a nominal voltage of 5V. This CMOS technology chip carrier package is ideal for commercial applications requiring fast memory access in a compact square shape.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,153 parts In-Stock

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4,153

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Digiode

USA . 2,070 parts In-Stock

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2,070

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Q Components

USA . 241 parts In-Stock

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241

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Electronics Depot

USA . 83 parts In-Stock

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83

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 511 parts In-Stock

1+ parts

$3.234

100+ parts

$300.350

1k+ parts

$2.911

10k+ parts

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511

$3.234

$300.350

$2.911

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DigiPath Technology Company

USA . 1,840 parts In-Stock

1+ parts

$3.561

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1,840

$3.561

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ChromeModa Solutions

Germany . 604 parts In-Stock

1+ parts

$3.634

100+ parts

$2.980

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604

$3.634

$2.980

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IDEA Electronic Components Group

UK . 301 parts In-Stock

1+ parts

$3.634

100+ parts

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$3.271

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301

$3.634

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$3.271

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AZTECH Wire

Italy . 234 parts In-Stock

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$16.111

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234

$16.111

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One Stop Electronics

USA . 897 parts In-Stock

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$26.000

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897

$26.000

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Corphita

USA . 3,073 parts In-Stock

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3,073

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Overview

Upgrade your electronics with the TACT2152-25FN by Texas Instruments, a high-quality memory circuit designed for optimal performance. Manufactured by industry leader Texas Instruments, this chip carrier package offers a wide range of applications and benefits for customers looking to enhance their devices. With a nominal supply voltage of 5V and a maximum access time of 25ns, this memory IC provides reliability and efficiency in commercial-grade temperatures. Experience the value and advantages of Texas Instruments technology with the TACT2152-25FN for all your memory circuit needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of PLASTIC/EPOXY for the package body material offers durability and protection for the memory IC, making it suitable for various environments.

Surface Mount: YES

The surface mount capability enables easy and efficient installation on circuit boards, saving time and effort during assembly.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard power supplies, making integration into existing systems straightforward.

No. of Terminals: 28

Having 28 terminals allows for versatile connectivity options and functionality, catering to diverse application requirements.

Memory Width: 8

With a memory width of 8, this memory IC can handle data processing efficiently and effectively, enhancing overall performance.

Technical Specifications

Other Function Memory ICs TACT2152-25FN attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

25 ns

JESD-30 Code:

S-PQCC-J28

Memory Density:

16384 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

28

No. of Words:

2048 words

No. of Words Code:

2K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC28,.5SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

SRAMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TACT2152-25FN Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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