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TACT2151-25FN

Texas Instruments

TACT2151-25FN by Texas Instruments

TACT2151-25FN by Texas Instruments is a 1Kx11 memory circuit IC with 11264-bit memory density. It features a max access time of 25ns and operates b/w 0°C to 70°C. This CMOS technology chip carrier package is ideal for applications requiring fast data retrieval in commercial-grade environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,712 parts In-Stock

1+ parts

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4,712

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Digiode

USA . 3,236 parts In-Stock

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3,236

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 367 parts In-Stock

1+ parts

$2.546

100+ parts

-

1k+ parts

$3.033

10k+ parts

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367

$2.546

-

$3.033

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DigiPath Technology Company

USA . 747 parts In-Stock

1+ parts

$2.804

100+ parts

-

1k+ parts

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747

$2.804

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ChromeModa Solutions

Germany . 1,160 parts In-Stock

1+ parts

$2.861

100+ parts

$2.346

1k+ parts

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1,160

$2.861

$2.346

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IDEA Electronic Components Group

UK . 433 parts In-Stock

1+ parts

$2.861

100+ parts

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$2.575

10k+ parts

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433

$2.861

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$2.575

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One Stop Electronics

USA . 1,197 parts In-Stock

1+ parts

$3.000

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1,197

$3.000

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AZTECH Wire

Italy . 318 parts In-Stock

1+ parts

$7.350

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318

$7.350

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Corphita

USA . 3,881 parts In-Stock

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3,881

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Overview

Upgrade your electronics with the TACT2151-25FN by Texas Instruments, a top-tier manufacturer known for quality and reliability. This memory IC is perfect for a wide range of applications in various industries, offering fast access times and high memory density. With its advanced technology and commercial-grade temperature tolerance, this chip carrier package boasts superior performance and longevity. Trust Texas Instruments to deliver innovative solutions that bring value and benefits to your projects, setting you apart from the competition.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides good protection and durability for the IC, making it suitable for various environments.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving time and effort.

Package Shape: SQUARE

The square shape helps in efficient space utilization on the PCB board, making it ideal for compact designs.

No. of Terminals: 28

Having 28 terminals allows for sufficient connectivity options and versatility in the application of the memory IC.

Package Style (Meter): CHIP CARRIER

The chip carrier package style offers protection for the IC and also enables easy handling and installation on the PCB.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this memory IC is suitable for a wide range of operating conditions.

Organization: 1KX11

The 1KX11 organization provides a specific memory capacity and arrangement that can meet the requirements of certain applications.

Minimum Operating Temperature: 0 °C

The minimum operating temperature of 0°C ensures reliability and performance even in lower temperature environments.

Terminal Position: QUAD

The quad terminal position allows for easy connectivity and integration into the PCB layout, enhancing overall design flexibility.

Temperature Grade: COMMERCIAL

Being commercial grade implies reliability and performance in standard commercial operating conditions, making it a dependable choice.

Technology: CMOS

CMOS technology offers low power consumption, high speed, and reliability, making this memory IC efficient and effective in various applications.

Terminal Form: J BEND

The J bend terminal form provides a secure connection and ease of soldering, ensuring a reliable electrical connection.

No. of Words: 1024 words

With 1024 words, this memory IC offers a decent storage capacity for data and instructions, suitable for various computing applications.

Memory Width: 11

A memory width of 11 indicates the number of bits that can be accessed at once, providing efficient data processing and retrieval.

Terminal Pitch: 1.27 mm

The 1.27 mm terminal pitch allows for precise and reliable connections on the PCB, enhancing overall system performance.

No. of Words Code: 1K

The 1K code signifies the memory capacity of the IC, allowing for easy identification and compatibility with other components.

Memory Density: 11264 bit

With a memory density of 11264 bits, this memory circuit can store a significant amount of data, suitable for demanding applications.

Memory IC Type: MEMORY CIRCUIT

Being a memory circuit type ensures that this IC is specifically designed for storing and retrieving data efficiently, making it a reliable choice for memory applications.

Maximum Access Time: 25 ns

With a maximum access time of 25 ns, this memory IC offers fast data retrieval and processing speeds, ensuring quick and efficient functionality.

Technical Specifications

Other Function Memory ICs TACT2151-25FN attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

25 ns

JESD-30 Code:

S-PQCC-J28

Memory Density:

11264 bit

Memory IC Type:

Memory Width:

11

No. of Terminals:

28

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX11

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC28,.5SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Sub-Category:

SRAMs

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TACT2151-25FN Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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