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TACT2152-25N

Texas Instruments

TACT2152-25N by Texas Instruments

TACT2152-25N by Texas Instruments is a 2Kx8 memory circuit IC with a memory density of 16384 bits. It operates at a max access time of 25ns and has a nominal voltage of 5V. This IC is commonly used in applications requiring fast data retrieval and storage, such as embedded systems and consumer electronics.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,330 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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8,330

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-

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Digiode

USA . 4,435 parts In-Stock

1+ parts

-

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-

1k+ parts

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4,435

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,124 parts In-Stock

1+ parts

$3.237

100+ parts

-

1k+ parts

$3.759

10k+ parts

-

1,124

$3.237

-

$3.759

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ChromeModa Solutions

Germany . 6,005 parts In-Stock

1+ parts

$3.637

100+ parts

$2.982

1k+ parts

-

10k+ parts

-

6,005

$3.637

$2.982

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IDEA Electronic Components Group

UK . 1,876 parts In-Stock

1+ parts

$3.637

100+ parts

-

1k+ parts

$3.273

10k+ parts

-

1,876

$3.637

-

$3.273

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One Stop Electronics

USA . 1,273 parts In-Stock

1+ parts

$7.000

100+ parts

-

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1,273

$7.000

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AZTECH Wire

Italy . 439 parts In-Stock

1+ parts

$7.768

100+ parts

-

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439

$7.768

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Corphita

USA . 2,576 parts In-Stock

1+ parts

-

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2,576

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DigiPath Technology Company

USA . 629 parts In-Stock

1+ parts

-

100+ parts

$3.279

1k+ parts

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10k+ parts

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629

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$3.279

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Overview

Enhance your electronic projects with the TACT2152-25N by Texas Instruments, a high-quality memory circuit that offers reliable performance and versatility. Manufactured by a trusted industry leader, this IC is perfect for a wide range of applications. With its 2Kx8 organization and fast 25 ns maximum access time, it provides efficient data storage and retrieval. Whether you're working on consumer electronics, industrial equipment, or automotive systems, this memory IC delivers value, benefits, and advantages that will elevate your designs to the next level. Trust Texas Instruments to provide cutting-edge technology that exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good durability and protection for the memory IC, ensuring it can withstand various environmental conditions.

Nominal Supply Voltage / Vsup (V): 5

Operating at a 5V supply voltage makes it compatible with a wide range of systems and devices, offering flexibility in application.

No. of Terminals: 28

Having 28 terminals allows for sufficient connections and integration within a circuit, enhancing overall functionality.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this memory IC can perform reliably in various operating conditions without overheating.

Memory Width: 8

An 8-bit memory width provides ample storage capacity and data processing capabilities for efficient performance.

Technical Specifications

Other Function Memory ICs TACT2152-25N attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

25 ns

JESD-30 Code:

R-PDIP-T28

Memory Density:

16384 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

28

No. of Words:

2048 words

No. of Words Code:

2K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP28,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

SRAMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TACT2152-25N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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