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TACT2154-25N3

Texas Instruments

TACT2154-25N3 by Texas Instruments

TACT2154-25N3 by Texas Instruments is a 2Kx8 memory circuit IC with 16384-bit memory density. It operates at a nominal voltage of 5V and has a max access time of 25ns. This CMOS technology IC is commonly used in applications requiring fast data retrieval within the commercial temperature range of 0 to 70°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,277 parts In-Stock

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Digiode

USA . 2,839 parts In-Stock

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Parana Technologies

USA . 1,694 parts In-Stock

1+ parts

$4.421

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$4.844

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$4.421

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$4.844

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DigiPath Technology Company

USA . 1,784 parts In-Stock

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$4.868

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$4.478

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1,784

$4.868

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ChromeModa Solutions

Germany . 2,770 parts In-Stock

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$4.967

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$4.073

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$4.967

$4.073

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IDEA Electronic Components Group

UK . 494 parts In-Stock

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$4.967

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$4.470

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494

$4.967

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$4.470

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AZTECH Wire

Italy . 338 parts In-Stock

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$7.756

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338

$7.756

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One Stop Electronics

USA . 1,367 parts In-Stock

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$26.000

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Corphita

USA . 4,363 parts In-Stock

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Overview

Unlock new possibilities with the TACT2154-25N3 by Texas Instruments, a high-quality Other Function Memory IC that offers unparalleled performance and reliability. Manufactured by industry leader Texas Instruments, this memory circuit is perfect for a wide range of applications. With a nominal supply voltage of 5V, 2KX8 organization, and maximum access time of 25 ns, this IC provides fast and efficient data storage solutions. Trust in Texas Instruments to deliver cutting-edge technology that exceeds expectations. Elevate your projects with the TACT2154-25N3 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protects the IC from external elements, making it suitable for various environments.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V ensures compatibility with a wide range of systems and devices.

No. of Terminals: 28

Having 28 terminals allows for versatile connectivity options and integration into complex circuit designs.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature of 70°C, this IC can perform reliably even in demanding conditions.

Organization: 2KX8

This organization configuration of 2Kx8 provides a total of 2048 words with a width of 8 bits each, offering ample memory storage and data processing capabilities.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and high noise immunity, enhancing the efficiency and reliability of the memory IC.

Memory Density: 16384 bit

The high memory density of 16384 bits allows for storing a large amount of data in a compact form factor, making it ideal for space-constrained applications.

Maximum Access Time: 25 ns

With a fast maximum access time of 25 nanoseconds, this memory IC can quickly retrieve information, improving overall system performance.

Technical Specifications

Other Function Memory ICs TACT2154-25N3 attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

25 ns

JESD-30 Code:

R-PDIP-T28

Memory Density:

16384 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

28

No. of Words:

2048 words

No. of Words Code:

2K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Maximum Standby Current:

.105 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

125 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TACT2154-25N3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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