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TMS2150-9JL

Texas Instruments

TMS2150-9JL by Texas Instruments

TMS2150-9JL by Texas Instruments is a 512x9 MEMORY CIRCUIT IC with 90ns access time, 145mA max supply current, and operates at 5V. It is used in applications requiring fast memory access and low power consumption in commercial-grade environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,956 parts In-Stock

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4,956

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Digiode

USA . 4,594 parts In-Stock

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4,594

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 573 parts In-Stock

1+ parts

$5.002

100+ parts

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573

$5.002

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Parana Technologies

USA . 1,432 parts In-Stock

1+ parts

$5.118

100+ parts

-

1k+ parts

$5.706

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1,432

$5.118

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$5.706

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DigiPath Technology Company

USA . 1,487 parts In-Stock

1+ parts

$5.635

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1,487

$5.635

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ChromeModa Solutions

Germany . 5,555 parts In-Stock

1+ parts

$5.750

100+ parts

$4.715

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5,555

$5.750

$4.715

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IDEA Electronic Components Group

UK . 208 parts In-Stock

1+ parts

$5.750

100+ parts

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$5.175

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208

$5.750

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$5.175

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One Stop Electronics

USA . 1,490 parts In-Stock

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$28.000

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1,490

$28.000

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Corphita

USA . 4,345 parts In-Stock

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Overview

Enhance your electronic projects with the TMS2150-9JL by Texas Instruments, a top-quality Memory IC designed to optimize performance and reliability. Manufactured by industry leader Texas Instruments, this product boasts superior craftsmanship and cutting-edge technology. Perfect for a wide range of applications, this Memory IC offers exceptional value and benefits to customers seeking seamless integration, fast access times, and efficient power consumption. Elevate your designs with the TMS2150-9JL and experience unmatched quality and performance today.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides excellent thermal conductivity, helping to dissipate heat efficiently and ensure stable operation of the memory IC.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V makes this memory IC compatible with a wide range of systems and simplifies power supply design.

No. of Terminals: 24

Having a higher number of terminals allows for more connectivity options and flexibility in integrating the memory IC into different circuits.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature of 70°C, this memory IC can withstand extended periods of use without overheating.

Organization: 512X9

The organization of 512 words with a width of 9 bits each provides a good balance between storage capacity and data access speed.

Technology: MOS

Using Metal-Oxide-Semiconductor technology ensures reliable performance and low power consumption in the memory circuit.

Terminal Form: THROUGH-HOLE

Having through-hole terminals simplifies the process of soldering and mounting the memory IC onto a circuit board.

Maximum Access Time: 90 ns

The fast maximum access time of 90 nanoseconds ensures quick retrieval of data from the memory, making it suitable for high-performance applications.

Technical Specifications

Other Function Memory ICs TMS2150-9JL attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

90 ns

JESD-30 Code:

R-XDIP-T24

Memory IC Type:

Memory Width:

9

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X9

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.145 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

145 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS2150-9JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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