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TMS2150-4JDL

Texas Instruments

TMS2150-4JDL by Texas Instruments

TMS2150-4JDL by Texas Instruments is a 512x9 MEMORY CIRCUIT IC with 45ns access time, 145mA max supply current, and 5V nominal voltage. It is ideal for applications requiring fast memory operations in commercial temperature environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,635 parts In-Stock

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Digiode

USA . 3,209 parts In-Stock

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Electronic Expediters

USA . 220 parts In-Stock

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220

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 23 parts In-Stock

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23

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Holdelec - ElecDif-Pro

France . 8 parts In-Stock

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Q Components

USA . 2 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 1,497 parts In-Stock

1+ parts

$3.116

100+ parts

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$3.636

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1,497

$3.116

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$3.636

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DigiPath Technology Company

USA . 1,083 parts In-Stock

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$3.431

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1,083

$3.431

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ChromeModa Solutions

Germany . 1,852 parts In-Stock

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$3.501

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$2.871

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$3.501

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IDEA Electronic Components Group

UK . 924 parts In-Stock

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$3.501

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$3.151

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924

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One Stop Electronics

USA . 1,206 parts In-Stock

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$7.000

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$7.000

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AZTECH Wire

Italy . 370 parts In-Stock

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$19.083

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370

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Corphita

USA . 4,203 parts In-Stock

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Overview

Unlock the potential of your electronic devices with the TMS2150-4JDL by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality products that ensure optimal performance and reliability. The TMS2150-4JDL falls under the category of Other Function Memory ICs, offering a versatile solution for various applications. With its durable ceramic package body material and efficient MOS technology, this memory circuit provides a seamless user experience. Trust Texas Instruments to provide innovative solutions that meet your needs and exceed your expectations. Experience the difference with the TMS2150-4JDL today!

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package offers high durability and reliability, making this memory IC suitable for harsh environments and long-term use.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard voltage level of 5V, ensuring compatibility with a wide range of systems and devices.

Maximum Operating Temperature: 70 °C

Can withstand relatively high temperatures, suitable for use in environments where heat may be a concern.

Organization: 512X9

Offers a decent organizational structure of 512 words with a width of 9 bits, providing sufficient memory capacity and data processing capability.

Technology: MOS

Utilizes Metal-Oxide-Semiconductor technology, known for its low power consumption and high speed performance, making it an energy-efficient choice.

Maximum Access Time: 45 ns

Provides fast access time for retrieving data, enhancing the overall efficiency and responsiveness of the memory IC.

Technical Specifications

Other Function Memory ICs TMS2150-4JDL attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

45 ns

JESD-30 Code:

R-XDIP-T24

Memory IC Type:

Memory Width:

9

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X9

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.145 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

145 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS2150-4JDL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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