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TMS2150-45DW

Texas Instruments

TMS2150-45DW by Texas Instruments

TMS2150-45DW by Texas Instruments is a 512x9 MOS memory IC with 45ns access time and 135mA supply current. It operates at temperatures from 0 to 70°C, making it suitable for commercial applications requiring fast data retrieval in a small outline package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,750 parts In-Stock

1+ parts

-

100+ parts

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6,750

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Digiode

USA . 2,682 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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2,682

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 569 parts In-Stock

1+ parts

$4.059

100+ parts

-

1k+ parts

$4.524

10k+ parts

-

569

$4.059

-

$4.524

-

ChromeModa Solutions

Germany . 3,886 parts In-Stock

1+ parts

$4.561

100+ parts

$3.740

1k+ parts

-

10k+ parts

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3,886

$4.561

$3.740

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IDEA Electronic Components Group

UK . 602 parts In-Stock

1+ parts

$4.561

100+ parts

-

1k+ parts

$4.105

10k+ parts

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602

$4.561

-

$4.105

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AZTECH Wire

Italy . 236 parts In-Stock

1+ parts

$5.827

100+ parts

-

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236

$5.827

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One Stop Electronics

USA . 1,388 parts In-Stock

1+ parts

$8.000

100+ parts

-

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10k+ parts

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1,388

$8.000

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DigiPath Technology Company

USA . 1,532 parts In-Stock

1+ parts

-

100+ parts

$4.112

1k+ parts

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10k+ parts

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1,532

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$4.112

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Corphita

USA . 986 parts In-Stock

1+ parts

-

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986

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Overview

Unlock the power of seamless data storage and retrieval with the TMS2150-45DW by Texas Instruments. Renowned for their cutting-edge technology and high-quality products, Texas Instruments delivers top-notch solutions for memory ICs. This versatile device is perfect for a wide range of applications in various industries, offering customers reliability, efficiency, and ease of use. Elevate your projects with the TMS2150-45DW and experience the unparalleled value it brings to your work.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product durable and resistant to wear and tear.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation of the memory IC.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage ensures compatibility with a wide range of systems and devices.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature of 70°C allows the memory IC to function reliably even in demanding conditions.

Organization: 512X9

The 512x9 organization provides a good balance of memory capacity and data width for efficient data processing.

Technology: MOS

The MOS technology used in this memory IC offers high speed and low power consumption for optimal performance.

Technical Specifications

Other Function Memory ICs TMS2150-45DW attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

45 ns

JESD-30 Code:

R-PDSO-G24

Memory IC Type:

Memory Width:

9

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X9

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP24,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.135 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

135 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

MOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS2150-45DW Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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