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TMS2150-45NT

Texas Instruments

TMS2150-45NT by Texas Instruments

TMS2150-45NT by Texas Instruments is a 512x9 MEMORY CIRCUIT IC with 45 ns access time, operating at 5V. It has 24 terminals in an IN-LINE package suitable for commercial applications requiring fast memory access and low standby current of 0.135A.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,120 parts In-Stock

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Digiode

USA . 2,898 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 2,759 parts In-Stock

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LWI Electronics Inc

India . 144 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 87 parts In-Stock

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Q Components

USA . 24 parts In-Stock

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24

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Inland Empire Components Inc.

USA . 6 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 2,203 parts In-Stock

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$4.439

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$4.867

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2,203

$4.439

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$4.867

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DigiPath Technology Company

USA . 1,053 parts In-Stock

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$4.888

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$4.497

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$4.888

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IDEA Electronic Components Group

UK . 1,890 parts In-Stock

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$4.988

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$4.489

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$4.988

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$4.489

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ChromeModa Solutions

Germany . 27 parts In-Stock

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$4.988

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$4.090

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27

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AZTECH Wire

Italy . 291 parts In-Stock

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$16.805

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One Stop Electronics

USA . 1,539 parts In-Stock

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$17.000

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Corphita

USA . 1,911 parts In-Stock

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Kepictronics

USA . 353 parts In-Stock

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Assy Fe

Spain . 87 parts In-Stock

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Overview

Elevate your projects with the TMS2150-45NT by Texas Instruments, a top-tier manufacturer known for delivering cutting-edge technology. This high-quality Other Function Memory IC offers unparalleled reliability and performance, making it ideal for a wide range of applications. With a nominal supply voltage of 5V and maximum access time of 45ns, this memory circuit ensures seamless operation in commercial-grade environments. Trust Texas Instruments to provide innovative solutions that exceed expectations, and experience the value and benefits of the TMS2150-45NT for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of PLASTIC/EPOXY material in the package body makes the product lightweight and durable, ideal for portable electronic devices.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage ensures compatibility with standard electronic systems, making it easy to integrate into existing designs.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this product can withstand various environmental conditions, ensuring reliable performance.

Memory Width: 9

The memory width of 9 bits allows for efficient data storage and retrieval, making this product suitable for applications requiring high-speed data processing.

Technology: MOS

The MOS technology used in this product offers low power consumption and high efficiency, making it a cost-effective and energy-efficient choice.

Technical Specifications

Other Function Memory ICs TMS2150-45NT attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

45 ns

JESD-30 Code:

R-PDIP-T24

Memory IC Type:

Memory Width:

9

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X9

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP24,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.135 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

135 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS2150-45NT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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