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M36W216B100ZA6T

STMicroelectronics

M36W216B100ZA6T by STMicroelectronics

M36W216B100ZA6T from STMicroelectronics is a low-profile, asynchronous memory IC with a 3V nominal voltage. It features 1M x 16 organization and operates in temperatures ranging from -40 °C to 85 °C. Ideal for industrial applications, it offers high-density storage in a compact package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,505 parts In-Stock

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4,505

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Vyrian

USA . 3,985 parts In-Stock

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3,985

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Anansix

USA . 1,062 parts In-Stock

1+ parts

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1,062

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 663 parts In-Stock

1+ parts

$4.065

100+ parts

-

1k+ parts

$3.658

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663

$4.065

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$3.658

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MKK Technologies

India . 1,405 parts In-Stock

1+ parts

$7.643

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1,405

$7.643

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DigiPath Technology Company

USA . 1,405 parts In-Stock

1+ parts

$7.643

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1,405

$7.643

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Corphita

USA . 4,976 parts In-Stock

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4,976

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Parana Technologies

USA . 1,277 parts In-Stock

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$4.860

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1,277

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$4.860

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Overview

Unlock unparalleled performance with the M36W216B100ZA6T memory IC from STMicroelectronics, a leader in innovative semiconductor solutions. Designed for industrial applications, this high-quality component ensures reliability across harsh conditions, operating from -40 °C to 85 °C. With its low-profile design and asynchronous mode, it's ideal for space-constrained environments. Trust in STMicroelectronics' legacy of excellence to elevate your projects with superior efficiency and functionality!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material offers excellent durability and cost-effectiveness, making it a reliable choice for various applications.

Surface Mount: YES

Surface mount technology allows for easier assembly and a more compact design, which is essential for modern electronics.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space and layout efficiency on printed circuit boards.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster data access with minimal latency, making it suitable for high-performance applications.

Nominal Supply Voltage / Vsup (V): 3

A nominal supply voltage of 3V balances power consumption and performance, making it ideal for battery-operated devices.

No. of Terminals: 66

With 66 terminals, this IC provides sufficient connections for extensive functionality and integration into complex systems.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

The low-profile, fine pitch grid array allows for high-density mounting on PCBs, essential in compact design applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this memory IC is suitable for industrial environments and applications requiring thermal resilience.

Organization: 1MX16

This organization provides a balanced structure for data storage, optimizing performance in data-intensive applications.

Minimum Operating Temperature: -40 °C

A minimum operating temperature of -40 °C ensures reliable performance in extreme conditions, making it suitable for industrial and automotive applications.

Terminal Position: BOTTOM

Bottom terminal positioning allows for effective heat dissipation and is beneficial for surface mount assembly processes.

Maximum Seated Height: 1.4 mm

A maximum seated height of 1.4 mm contributes to a low profile design, which is advantageous for space-constrained applications.

Width: 8 mm

An 8 mm width allows for compact layout and is easy to accommodate in a variety of electronic devices.

Minimum Supply Voltage (Vsup): 2.7 V

A minimum supply voltage of 2.7V increases versatility in power supply options and extends battery life in portable applications.

Length: 12 mm

With a length of 12 mm, the IC is optimized for compact designs while maintaining robust performance.

Temperature Grade: INDUSTRIAL

Designed for industrial temperature ranges, this IC is reliable in challenging conditions, enhancing its application scope in tough environments.

Technology: CMOS

CMOS technology is known for low power consumption and high speed, making this IC efficient for a wide range of applications.

Terminal Form: BALL

Ball terminal form provides superior soldering quality and reliability, enhancing overall performance and durability of the IC.

No. of Words: 1048576 words

With 1,048,576 words, this IC provides substantial data storage capacity, suitable for applications requiring significant memory resources.

Memory Width: 16

A memory width of 16 enhances data throughput, allowing for faster processing in applications that demand high-speed operations.

Terminal Pitch: 0.8 mm

A terminal pitch of 0.8 mm allows for higher density designs without compromising signal integrity, which is crucial for modern electronics.

No. of Words Code: 1M

With a word code of 1M, this IC is well-suited for applications that require substantial data handling capabilities.

Maximum Supply Voltage (Vsup): 3.3 V

A maximum supply voltage of 3.3V covers a wide range of applications, ensuring compatibility with various system designs.

Memory Density: 16777216 bit

A memory density of 16,777,216 bits provides ample storage, making this IC a great choice for data-heavy applications.

Memory IC Type: MEMORY CIRCUIT

As a dedicated memory circuit, this IC is optimized for data storage, ensuring reliable performance in memory-critical applications.

Technical Specifications

Other Function Memory ICs M36W216B100ZA6T attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

ALSO CONTAINS 128K X 16 SRAM

JESD-30 Code:

R-PBGA-B66

Length:

12 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

66

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Supply Voltage (Vsup):

3.3 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36W216B100ZA6T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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