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SNJ54HC670FK

Texas Instruments

SNJ54HC670FK by Texas Instruments

SNJ54HC670FK by Texas Instruments is a CMOS memory IC with 20 terminals in a chip carrier package. Operating temperature ranges from -55 to 125°C, suitable for military-grade applications. It has power supplies of 2-6V and is surface mountable, making it ideal for various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,324 parts In-Stock

1+ parts

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4,324

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Digiode

USA . 2,172 parts In-Stock

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2,172

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 588 parts In-Stock

1+ parts

$3.637

100+ parts

-

1k+ parts

$4.146

10k+ parts

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588

$3.637

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$4.146

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DigiPath Technology Company

USA . 1,145 parts In-Stock

1+ parts

$4.004

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1,145

$4.004

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ChromeModa Solutions

Germany . 5,540 parts In-Stock

1+ parts

$4.086

100+ parts

$3.351

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5,540

$4.086

$3.351

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IDEA Electronic Components Group

UK . 1,707 parts In-Stock

1+ parts

$4.086

100+ parts

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$3.677

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1,707

$4.086

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$3.677

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AZTECH Wire

Italy . 259 parts In-Stock

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$7.026

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259

$7.026

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One Stop Electronics

USA . 805 parts In-Stock

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$9.000

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805

$9.000

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Corphita

USA . 1,444 parts In-Stock

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Overview

Unlock the endless possibilities with the SNJ54HC670FK by Texas Instruments. Crafted with unmatched quality and precision, this memory IC offers reliability and performance like no other. From military-grade technology to its versatile applications in various industries, this product is designed to exceed expectations. Experience seamless operation and unparalleled value with the SNJ54HC670FK, where innovation meets excellence. Choose Texas Instruments for a reliable partner in your journey towards success.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package provides excellent thermal conductivity and low electrical impedance, making it ideal for high-performance applications.

Surface Mount: YES

Surface mount technology allows for easy installation and space-saving designs, making it efficient for manufacturing processes.

Screening Level: 38535Q/M;38534H;883B

Higher screening levels ensure reliability and performance in rugged environments, meeting military standards for quality assurance.

Package Shape: SQUARE

Square package shape allows for efficient use of board space and facilitates easy alignment during assembly.

Power Supplies (V): 2/6

Supports a wide range of power supply voltages, offering flexibility for diverse applications.

No. of Terminals: 20

Provides a sufficient number of terminals for connectivity and functionality in complex circuits.

Package Style (Meter): CHIP CARRIER

Chip carrier package style ensures reliable contact and heat dissipation, suitable for demanding environments.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows for reliable performance in varying environmental conditions.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature enables reliable operation in extreme cold conditions.

Terminal Position: QUAD

Quad terminal position provides enhanced connectivity and stability for secure connections.

Temperature Grade: MILITARY

Military-grade temperature grade ensures robustness and reliability even in harsh operating conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making it efficient for various applications.

Terminal Form: NO LEAD

No lead terminal form reduces the risk of solder joint failure and enhances electrical performance.

Terminal Pitch: 1.27 mm

Fine terminal pitch allows for compact design and precise connections, suitable for high-density circuit applications.

Technical Specifications

Other Function Memory ICs SNJ54HC670FK attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-XQCC-N20

No. of Terminals:

20

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC

Package Code:

Package Equivalence Code:

LCC20,.35SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Power Supplies (V):

2/6

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

Other Memory ICs

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Trade Compliance

SNJ54HC670FK Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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