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SNJ54ALS871JD

Texas Instruments

SNJ54ALS871JD by Texas Instruments

SNJ54ALS871JD by Texas Instruments is a MILITARY-grade TTL IC with 24 terminals in an IN-LINE package. It operates b/w -55°C to 125°C, making it suitable for harsh environments. This IC is commonly used in applications requiring high reliability and performance under extreme temperature conditions.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,565 parts In-Stock

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6,565

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Digiode

USA . 4,559 parts In-Stock

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4,559

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 432 parts In-Stock

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$5.000

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432

$5.000

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Parana Technologies

USA . 1,737 parts In-Stock

1+ parts

$5.084

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-

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$5.661

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1,737

$5.084

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$5.661

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DigiPath Technology Company

USA . 1,278 parts In-Stock

1+ parts

$5.598

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1,278

$5.598

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ChromeModa Solutions

Germany . 4,185 parts In-Stock

1+ parts

$5.712

100+ parts

$4.684

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4,185

$5.712

$4.684

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IDEA Electronic Components Group

UK . 2,207 parts In-Stock

1+ parts

$5.712

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$5.141

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2,207

$5.712

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$5.141

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AZTECH Wire

Italy . 834 parts In-Stock

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$18.627

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834

$18.627

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Corphita

USA . 2,017 parts In-Stock

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2,017

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Overview

Unlock the power of versatile memory ICs with the SNJ54ALS871JD by Texas Instruments. Known for their high-quality components and reliable performance, Texas Instruments delivers cutting-edge technology to meet a variety of application needs. Whether you're designing industrial equipment or aerospace systems, this product offers unparalleled value and benefits. Trust in Texas Instruments to provide top-of-the-line solutions for your electronic projects.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages offer excellent thermal performance, making this product suitable for high temperature environments.

Screening Level: 38535Q/M;38534H;883B

This screening level ensures high reliability and quality, making this product suitable for critical applications.

Package Shape: RECTANGULAR

Rectangular package shape allows for efficient use of space in circuit board design, making this product compact and versatile.

Package Style (Meter): IN-LINE

In-line package style simplifies the integration of this product in existing systems, offering ease of assembly and maintenance.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this product can withstand high temperature environments, ensuring reliable performance under extreme conditions.

Minimum Operating Temperature: -55 °C

The product's minimum operating temperature of -55°C allows for operation in low temperature environments, providing versatility in usage.

Terminal Form: THROUGH-HOLE

Through-hole terminal form ensures secure and reliable connections on the circuit board, enhancing the product's durability and stability.

Technology: TTL

Being based on TTL technology, this product offers fast switching speeds and low power consumption, making it suitable for applications requiring high performance.

Technical Specifications

Other Function Memory ICs SNJ54ALS871JD attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-XDIP-T24

No. of Terminals:

24

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

Other Memory ICs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SNJ54ALS871JD Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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