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SM4461-15JDS

Texas Instruments

SM4461-15JDS by Texas Instruments

SM4461-15JDS by Texas Instruments is a 64KX4 VIDEO DRAM IC with 262144 bit memory density. It operates at 5V, has 24 terminals in an IN-LINE package style, and offers a max access time of 150 ns. Ideal for applications requiring high-speed video data processing in temperature ranges from -55 to 110°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,340 parts In-Stock

1+ parts

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3,340

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Digiode

USA . 1,416 parts In-Stock

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1,416

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North Shore Components

USA . 105 parts In-Stock

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105

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 231 parts In-Stock

1+ parts

$4.965

100+ parts

-

1k+ parts

$5.508

10k+ parts

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231

$4.965

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$5.508

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DigiPath Technology Company

USA . 2,000 parts In-Stock

1+ parts

$5.467

100+ parts

$5.030

1k+ parts

-

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2,000

$5.467

$5.030

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ChromeModa Solutions

Germany . 3,177 parts In-Stock

1+ parts

$5.579

100+ parts

$4.575

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-

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3,177

$5.579

$4.575

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IDEA Electronic Components Group

UK . 191 parts In-Stock

1+ parts

$5.579

100+ parts

-

1k+ parts

$5.021

10k+ parts

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191

$5.579

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$5.021

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AZTECH Wire

Italy . 667 parts In-Stock

1+ parts

$7.495

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667

$7.495

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One Stop Electronics

USA . 282 parts In-Stock

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$16.000

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282

$16.000

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Corphita

USA . 2,849 parts In-Stock

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2,849

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Overview

Unlock the power of cutting-edge technology with the SM4461-15JDS by Texas Instruments. This high-quality memory IC boasts unparalleled reliability and performance, making it ideal for a wide range of applications in the electronics industry. With its advanced features and innovative design, this product offers customers exceptional value and benefits. Trust Texas Instruments to deliver top-notch products that exceed expectations and drive success in your projects. Choose the SM4461-15JDS for superior performance and unmatched quality.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic is known for its durability and heat resistance, providing a reliable housing for the memory IC.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage ensures compatibility with a wide range of systems.

No. of Terminals: 24

Having 24 terminals allows for efficient data transfer and connectivity within the device.

Maximum Operating Temperature: 110 °C

With a high maximum operating temperature, this memory IC can perform reliably even in demanding conditions.

Organization: 64KX4

This organization configuration ensures efficient memory storage and retrieval for optimal performance.

Memory Width: 4

A memory width of 4 bits allows for fast data transfer and processing within the IC.

Technology: MOS

MOS technology offers low power consumption and high speed operation, making this memory IC energy efficient and fast.

Memory Density: 262144 bit

With a high memory density, this IC can store a large amount of data in a compact form factor.

Memory IC Type: VIDEO DRAM

Being a Video DRAM, this memory IC is optimized for graphics processing and video applications, making it ideal for multimedia devices.

Maximum Access Time: 150 ns

A fast maximum access time of 150 nanoseconds ensures quick retrieval of data, enhancing overall performance.

Technical Specifications

Other Function Memory ICs SM4461-15JDS attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

150 ns

JESD-30 Code:

R-XDIP-T24

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

4

No. of Terminals:

24

No. of Words:

65536 words

No. of Words Code:

64K

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

64KX4

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.4

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

Other Memory ICs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SM4461-15JDS Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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