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SNJ54AS8834GB

Texas Instruments

SNJ54AS8834GB by Texas Instruments

SNJ54AS8834GB by Texas Instruments is a 2560-bit MEMORY CIRCUIT IC with 64x40 organization and TTL technology. Operating in SYNCHRONOUS mode at temperatures from -55°C to 125°C, it has a supply voltage range of 4.5V to 5.5V, making it ideal for MILITARY applications requiring high-performance memory solutions.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,562 parts In-Stock

1+ parts

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2,562

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Digiode

USA . 269 parts In-Stock

1+ parts

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269

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,622 parts In-Stock

1+ parts

$3.596

100+ parts

$333.906

1k+ parts

$3.236

10k+ parts

-

1,622

$3.596

$333.906

$3.236

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DigiPath Technology Company

USA . 992 parts In-Stock

1+ parts

$3.959

100+ parts

$3.642

1k+ parts

-

10k+ parts

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992

$3.959

$3.642

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ChromeModa Solutions

Germany . 4,377 parts In-Stock

1+ parts

$4.040

100+ parts

$3.313

1k+ parts

-

10k+ parts

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4,377

$4.040

$3.313

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IDEA Electronic Components Group

UK . 995 parts In-Stock

1+ parts

$4.040

100+ parts

-

1k+ parts

$3.636

10k+ parts

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995

$4.040

-

$3.636

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AZTECH Wire

Italy . 789 parts In-Stock

1+ parts

$18.718

100+ parts

-

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10k+ parts

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789

$18.718

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One Stop Electronics

USA . 665 parts In-Stock

1+ parts

$30.000

100+ parts

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665

$30.000

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Corphita

USA . 3,971 parts In-Stock

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3,971

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Overview

Elevate your projects with the SNJ54AS8834GB by Texas Instruments, a top-tier manufacturer known for delivering high-quality components. This innovative Memory IC offers unparalleled performance in a wide range of applications. With its military-grade technology and reliable operation, this product ensures optimal functionality and efficiency. Trust Texas Instruments to provide cutting-edge solutions that exceed expectations and elevate your designs to the next level. Choose excellence with the SNJ54AS8834GB.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material combination provides durability and protection for the memory IC, ensuring long-term reliability.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer speeds and better efficiency in data processing.

Nominal Supply Voltage: 5V

Stable supply voltage ensures consistent performance and prevents damage to the memory IC.

No. of Terminals: 156

Having a high number of terminals allows for more connections and flexibility in system integration.

Maximum Operating Temperature: 125 °C

Ability to operate at high temperatures enables usage in a wide range of environments and applications.

Organization: 64X40

Organized in a 64x40 configuration, this memory IC offers efficient storage and retrieval of data.

Temperature Grade: MILITARY

Military-grade temperature tolerance ensures reliability in extreme conditions and critical operations.

Technology: TTL

TTL technology offers fast response times and low power consumption, ideal for memory circuits.

No. of Words: 64 words

Support for 64 words allows for a decent amount of data storage capacity in the memory IC.

Memory Width: 40

With a memory width of 40, this memory IC can handle data in parallel efficiently.

Technical Specifications

Other Function Memory ICs SNJ54AS8834GB attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-CPGA-P156

Memory Density:

2560 bit

Memory IC Type:

Memory Width:

40

No. of Functions:

1

No. of Terminals:

156

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

64X40

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

PGA

Package Shape:

Package Style (Meter):

GRID ARRAY

Qualification:

Not Qualified

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

PIN/PEG

Terminal Position:

PERPENDICULAR

Trade Compliance

SNJ54AS8834GB Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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