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SNJ54HC670J

Texas Instruments

SNJ54HC670J by Texas Instruments

SNJ54HC670J by Texas Instruments is a CMOS memory IC with 16 terminals and operating temperature range of -55 to 125°C. It has power supplies of 2-6V, suitable for military applications due to its MIL-graded screening level. The package style is in-line rectangular ceramic, making it ideal for robust electronic systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,084 parts In-Stock

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Digiode

USA . 3,896 parts In-Stock

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Parana Technologies

USA . 2,217 parts In-Stock

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$3.151

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$3.671

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DigiPath Technology Company

USA . 1,085 parts In-Stock

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$3.470

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ChromeModa Solutions

Germany . 4,031 parts In-Stock

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$2.904

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IDEA Electronic Components Group

UK . 1,074 parts In-Stock

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$3.187

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AZTECH Wire

Italy . 759 parts In-Stock

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$12.458

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One Stop Electronics

USA . 1,582 parts In-Stock

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Corphita

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Overview

Looking for a reliable and high-quality memory IC? Look no further than the SNJ54HC670J by Texas Instruments. With a proven track record of excellence in manufacturing, Texas Instruments delivers top-notch products that exceed industry standards. The SNJ54HC670J is versatile and can be used in various applications, providing customers with unmatched value and benefits. Trust Texas Instruments to provide you with cutting-edge technology that meets your needs.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages offer excellent thermal conductivity and are known for their durability, making this product suitable for high-temperature applications.

Screening Level: 38535Q/M;38534H;883B

The high screening level ensures that the product meets stringent quality standards and is reliable for use in critical environments.

Package Shape: RECTANGULAR

Rectangular packages are space-efficient and easy to handle, making them a practical choice for compact electronic designs.

Power Supplies (V): 2/6

The wide power supply range of 2V to 6V provides flexibility for different operating conditions and voltage requirements.

No. of Terminals: 16

With 16 terminals, this product offers sufficient connectivity options for various circuit configurations and interfaces.

Package Style (Meter): IN-LINE

The in-line package style makes it easy to integrate this product into existing circuit layouts and ensures compatibility with standard mounting techniques.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C enables this product to withstand elevated temperatures without performance degradation.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55°C allows this product to function reliably in cold environments or during temperature fluctuations.

Terminal Position: DUAL

Dual terminal positions provide redundancy and ensure reliable contact for secure connections in demanding applications.

Temperature Grade: MILITARY

Military-grade temperature ratings ensure that this product can withstand harsh environmental conditions and operate reliably in rugged settings.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with a wide range of digital circuits, making this product efficient and versatile.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical support and are ideal for applications where robust solder joints and secure connections are essential.

Terminal Pitch: 2.54 mm

The standard terminal pitch of 2.54mm allows for easy integration with commonly used PCB layouts and facilitates efficient soldering and assembly processes.

Technical Specifications

Other Function Memory ICs SNJ54HC670J attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-XDIP-T16

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

2/6

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

Other Memory ICs

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SNJ54HC670J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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