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5962-01-218-1995

Texas Instruments

5962-01-218-1995 by Texas Instruments

The Texas Instruments 5962-01-218-1995 is a MOS memory circuit IC with 24 terminals in an in-line rectangular package. It operates b/w -25°C to 85°C, making it suitable for various applications requiring reliable memory storage and retrieval. The through-hole terminals spaced at 2.54mm pitch ensure secure connections in electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,762 parts In-Stock

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4,762

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Digiode

USA . 4,503 parts In-Stock

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4,503

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Distributors (Availability)

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One Stop Electronics

USA . 1,045 parts In-Stock

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$4.000

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1,045

$4.000

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Parana Technologies

USA . 743 parts In-Stock

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$4.623

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$5.094

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743

$4.623

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$5.094

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ChromeModa Solutions

Germany . 3,029 parts In-Stock

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$5.194

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$4.259

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3,029

$5.194

$4.259

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IDEA Electronic Components Group

UK . 2,112 parts In-Stock

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$5.194

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$4.675

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2,112

$5.194

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$4.675

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AZTECH Wire

Italy . 395 parts In-Stock

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$6.318

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395

$6.318

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Corphita

USA . 3,135 parts In-Stock

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3,135

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Northwest PG Solutions

USA . 1,079 parts In-Stock

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Native Components

USA . 712 parts In-Stock

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DigiPath Technology Company

USA . 85 parts In-Stock

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$4.683

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85

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$4.683

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Overview

Experience the unmatched quality and reliability of Texas Instruments with the 5962-01-218-1995. This high-performance memory circuit offers unparalleled value with its durable plastic/epoxy package, dual terminal position, and advanced MOS technology. Perfect for a wide range of applications, this IC provides exceptional performance in a compact rectangular package with 24 terminals. Trust in Texas Instruments for superior products that deliver top-notch results every time. Elevate your projects with the 5962-01-218-1995 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy is a lightweight and durable material, making this memory ICs product easy to handle and resistant to damage during handling and installation.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space in electronic devices, maximizing the memory capacity without taking up unnecessary space.

No. of Terminals: 24

Having 24 terminals allows for versatile connectivity options, enabling the memory ICs to be used in various circuit configurations.

Package Style (Meter): IN-LINE

The in-line package style simplifies the installation process, making it easy to integrate the memory ICs into electronic systems.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this memory ICs product can withstand high temperatures, making it suitable for a wide range of applications.

Minimum Operating Temperature: -25 °C

The ability to operate at temperatures as low as -25°C allows this memory ICs product to function in various environmental conditions.

Terminal Position: DUAL

Dual terminal position provides redundancy and flexibility in connecting the memory ICs within a circuit, enhancing reliability and ease of use.

Technology: MOS

MOS technology offers low power consumption and high speed performance, making this memory ICs product energy-efficient and reliable.

Terminal Form: THROUGH-HOLE

Through-hole terminals ensure secure and stable connections, minimizing the risk of disconnection or signal interference in the memory ICs product.

Terminal Pitch: 2.54 mm

A terminal pitch of 2.54 mm allows for easy soldering and connection of the memory ICs, facilitating simple installation and maintenance processes.

Memory IC Type: MEMORY CIRCUIT

Being a memory circuit, this product is designed to store and retrieve data accurately and efficiently, making it a reliable choice for memory-intensive applications.

Technical Specifications

Other Function Memory ICs 5962-01-218-1995 attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-PDIP-T24

Memory IC Type:

No. of Terminals:

24

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Sub-Category:

Other Memory ICs

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

5962-01-218-1995 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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