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TMS2758-JL1

Texas Instruments

TMS2758-JL1 by Texas Instruments

TMS2758-JL1 by Texas Instruments is a 1Kx8 MOS memory IC with 8192-bit density. It features 450ns access time, operates b/w 0-70°C, and has 3-state output characteristics. Ideal for applications requiring common I/O type in commercial-grade temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,855 parts In-Stock

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4,855

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Digiode

USA . 4,753 parts In-Stock

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4,753

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Distributors (Availability)

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Parana Technologies

USA . 1,869 parts In-Stock

1+ parts

$2.720

100+ parts

-

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$3.202

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1,869

$2.720

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$3.202

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DigiPath Technology Company

USA . 595 parts In-Stock

1+ parts

$2.995

100+ parts

$2.755

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-

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595

$2.995

$2.755

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ChromeModa Solutions

Germany . 5,725 parts In-Stock

1+ parts

$3.056

100+ parts

$2.506

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5,725

$3.056

$2.506

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IDEA Electronic Components Group

UK . 1,726 parts In-Stock

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$3.056

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$2.750

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1,726

$3.056

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$2.750

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AZTECH Wire

Italy . 897 parts In-Stock

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$7.257

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897

$7.257

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One Stop Electronics

USA . 377 parts In-Stock

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$10.000

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377

$10.000

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Corphita

USA . 166 parts In-Stock

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Overview

Experience the unmatched quality and reliability of Texas Instruments with the TMS2758-JL1 Other Function Memory IC. This advanced technology offers unparalleled performance and versatility, making it ideal for a wide range of applications. With its innovative design and top-notch manufacturing, this product ensures seamless operation and exceptional durability. Trust Texas Instruments to deliver cutting-edge solutions that exceed your expectations. Unlock the full potential of your projects with the TMS2758-JL1 - where quality meets excellence.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide excellent thermal conductivity and mechanical strength, making the product durable and reliable.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this memory IC can function well even under high temperature conditions.

Organization: 1KX8

With an organization of 1KX8, this memory IC can store 1024 words of 8 bits each, providing ample storage capacity for data.

Output Characteristics: 3-STATE

The 3-STATE output characteristics allow the memory IC to drive bus lines effectively, providing flexibility in controlling the output signal.

Technology: MOS

MOS technology offers high-speed performance and low power consumption, making it an efficient choice for memory ICs.

Maximum Access Time: 450 ns

With a maximum access time of 450 nanoseconds, this memory IC can deliver data quickly, enhancing overall system performance.

Technical Specifications

Other Function Memory ICs TMS2758-JL1 attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

450 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-XDIP-T24

Memory Density:

8192 bit

Memory Width:

8

No. of Terminals:

24

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Sub-Category:

Other Memory ICs

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

TMS2758-JL1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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