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TMS2150-35JD

Texas Instruments

TMS2150-35JD by Texas Instruments

TMS2150-35JD by Texas Instruments is a 512x9 MEMORY CIRCUIT IC with 35ns access time, ideal for commercial applications. Operating at 5V, it has a max standby current of 0.145A and operates in temperatures ranging from 0 to 70°C. The package style is IN-LINE with a RECTANGULAR shape and CERAMIC body material.

Median Price

$23.400

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 5 parts In-Stock

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$23.400

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$23.400

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Vyrian

USA . 8,977 parts In-Stock

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Digiode

USA . 958 parts In-Stock

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958

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Electronic Expediters

USA . 150 parts In-Stock

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150

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R&J Components

USA . 96 parts In-Stock

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96

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MRC Electronics

USA . 36 parts In-Stock

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36

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Q Components

USA . 8 parts In-Stock

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Lakeland Logistics Inc

USA . 5 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,361 parts In-Stock

1+ parts

$3.463

100+ parts

-

1k+ parts

$3.988

10k+ parts

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1,361

$3.463

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$3.988

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DigiPath Technology Company

USA . 2,022 parts In-Stock

1+ parts

$3.813

100+ parts

$3.508

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2,022

$3.813

$3.508

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ChromeModa Solutions

Germany . 2,799 parts In-Stock

1+ parts

$3.891

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$3.191

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2,799

$3.891

$3.191

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IDEA Electronic Components Group

UK . 720 parts In-Stock

1+ parts

$3.891

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$3.502

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720

$3.891

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$3.502

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AZTECH Wire

Italy . 258 parts In-Stock

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$5.491

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258

$5.491

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One Stop Electronics

USA . 507 parts In-Stock

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$15.000

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507

$15.000

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Corphita

USA . 4,800 parts In-Stock

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4,800

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Overview

Unlock the power of cutting-edge technology with the TMS2150-35JD by Texas Instruments. Known for their superior quality and reliability, Texas Instruments delivers exceptional performance in the category of Other Function Memory ICs. This innovative product offers customers unmatched value, benefits, and advantages, making it the ideal choice for a wide range of applications. Experience seamless operation and enhanced efficiency with the TMS2150-35JD, setting new standards in memory circuit technology.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package body material provides excellent thermal conductivity and reliability, ensuring the memory IC operates efficiently and with high durability.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage allows for compatibility with a wide range of systems and applications.

Organization: 512X9

The 512x9 organization offers a good balance between storage capacity and data transfer speed for various memory-intensive tasks.

Technology: MOS

MOS technology provides low power consumption and high-speed performance, making this memory IC suitable for energy-efficient applications.

Maximum Access Time: 35 ns

With a maximum access time of 35 nanoseconds, this memory IC ensures quick retrieval of data and efficient processing for time-sensitive operations.

Technical Specifications

Other Function Memory ICs TMS2150-35JD attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

35 ns

JESD-30 Code:

R-XDIP-T24

Memory IC Type:

Memory Width:

9

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X9

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.145 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

145 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS2150-35JD Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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