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TMS2150-4JL

Texas Instruments

TMS2150-4JL by Texas Instruments

TMS2150-4JL by Texas Instruments is a 512x9 MEMORY CIRCUIT IC with 5V supply, 45ns access time, and 145mA max current. It is ideal for commercial applications requiring fast memory operations in a ceramic rectangular package with through-hole terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,438 parts In-Stock

1+ parts

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2,438

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Digiode

USA . 1,042 parts In-Stock

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1,042

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,177 parts In-Stock

1+ parts

$2.869

100+ parts

-

1k+ parts

$3.361

10k+ parts

-

1,177

$2.869

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$3.361

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DigiPath Technology Company

USA . 1,055 parts In-Stock

1+ parts

$3.160

100+ parts

$2.907

1k+ parts

-

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1,055

$3.160

$2.907

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IDEA Electronic Components Group

UK . 2,004 parts In-Stock

1+ parts

$3.224

100+ parts

-

1k+ parts

$2.902

10k+ parts

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2,004

$3.224

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$2.902

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ChromeModa Solutions

Germany . 743 parts In-Stock

1+ parts

$3.224

100+ parts

$2.644

1k+ parts

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743

$3.224

$2.644

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One Stop Electronics

USA . 821 parts In-Stock

1+ parts

$10.000

100+ parts

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821

$10.000

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AZTECH Wire

Italy . 546 parts In-Stock

1+ parts

$16.482

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546

$16.482

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Corphita

USA . 4,314 parts In-Stock

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4,314

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Overview

Unlock the power of innovation with the TMS2150-4JL by Texas Instruments. This top-quality memory IC offers unparalleled performance and reliability, backed by the trusted name of Texas Instruments. Ideal for a variety of applications, this product provides customers with value and peace of mind knowing they are investing in a superior solution. Experience the benefits and advantages that come with choosing the TMS2150-4JL for your next project.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package body material provides excellent thermal and electrical properties, ensuring reliability and durability of the memory IC.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V makes it compatible with many standard systems, offering easy integration and widespread applicability.

No. of Terminals: 24

Having 24 terminals allows for versatile connectivity options, enabling efficient data transfer and communication with other components.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this memory IC can function effectively even in high-temperature environments.

Organization: 512X9

The organization of 512 words by 9 memory width provides ample storage capacity and efficient data retrieval, making it suitable for various applications.

Technology: MOS

Utilizing MOS technology ensures high-speed performance, low power consumption, and reliable operation, making it an efficient choice for memory circuit applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form allows for easy soldering and secure connections, enhancing the durability and stability of the memory IC in various electronic systems.

Maximum Access Time: 45 ns

With a maximum access time of 45 nanoseconds, this memory IC offers fast data retrieval and processing speeds, improving overall system performance.

Technical Specifications

Other Function Memory ICs TMS2150-4JL attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

45 ns

JESD-30 Code:

R-XDIP-T24

Memory IC Type:

Memory Width:

9

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X9

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.145 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

145 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS2150-4JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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