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TMS2150-55JD

Texas Instruments

TMS2150-55JD by Texas Instruments

TMS2150-55JD by Texas Instruments is a 512x9 MEMORY CIRCUIT IC with 55ns access time, 135mA max supply current, and 5V nominal voltage. It is ideal for applications requiring fast memory access in commercial-grade environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,838 parts In-Stock

1+ parts

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2,838

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Vyrian

USA . 2,518 parts In-Stock

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2,518

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Electronic Expediters

USA . 15 parts In-Stock

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15

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 1,385 parts In-Stock

1+ parts

$1.000

100+ parts

-

1k+ parts

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1,385

$1.000

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Parana Technologies

USA . 1,325 parts In-Stock

1+ parts

$2.476

100+ parts

-

1k+ parts

$2.967

10k+ parts

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1,325

$2.476

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$2.967

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DigiPath Technology Company

USA . 1,154 parts In-Stock

1+ parts

$2.726

100+ parts

$2.508

1k+ parts

-

10k+ parts

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1,154

$2.726

$2.508

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ChromeModa Solutions

Germany . 5,681 parts In-Stock

1+ parts

$2.782

100+ parts

$2.281

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5,681

$2.782

$2.281

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IDEA Electronic Components Group

UK . 1,654 parts In-Stock

1+ parts

$2.782

100+ parts

-

1k+ parts

$2.504

10k+ parts

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1,654

$2.782

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$2.504

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AZTECH Wire

Italy . 299 parts In-Stock

1+ parts

$7.278

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299

$7.278

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Corphita

USA . 1,472 parts In-Stock

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1,472

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Overview

Enhance your electronic projects with the TMS2150-55JD by Texas Instruments, a top-quality memory circuit IC that offers exceptional performance and reliability. Manufactured by industry leader Texas Instruments, this product is designed for a wide range of applications in various industries. With its innovative technology and efficient design, the TMS2150-55JD delivers value and benefits to customers looking for a superior memory solution. Experience the advantages of this versatile IC and take your projects to the next level with Texas Instruments.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package material provides excellent thermal conductivity, making it ideal for high temperature environments and ensuring long-term reliability.

Nominal Supply Voltage / Vsup (V): 5

Operating at a 5V supply voltage makes this product compatible with common power supply standards, ensuring easy integration into existing systems.

Package Style (Meter): IN-LINE

The in-line package style allows for efficient PCB layout and space-saving design, enabling compact and streamlined system configurations.

Organization: 512X9

With a 512x9 organization, this memory IC offers ample storage capacity and data processing capabilities, suitable for various applications requiring large memory storage.

Technology: MOS

Utilizing MOS technology ensures low power consumption and high speed operation, making this memory IC energy-efficient and responsive.

Maximum Access Time: 55 ns

The fast access time of 55 ns allows for quick data retrieval and processing, enhancing overall system performance and efficiency.

Technical Specifications

Other Function Memory ICs TMS2150-55JD attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

55 ns

JESD-30 Code:

R-XDIP-T24

Memory IC Type:

Memory Width:

9

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X9

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.135 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

135 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS2150-55JD Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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