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M36LLR8760D1ZAQE

STMicroelectronics

M36LLR8760D1ZAQE by STMicroelectronics

M36LLR8760D1ZAQE by STMicroelectronics is a low-profile, asynchronous memory IC featuring 16M words of mixed FLASH+PSRAM. It operates at a nominal voltage of 1.8V and supports temperatures from -25 °C to 85 °C. Ideal for compact applications requiring efficient data storage and retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,015 parts In-Stock

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Anansix

USA . 2,719 parts In-Stock

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2,719

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Digiode

USA . 1,644 parts In-Stock

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1,644

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 699 parts In-Stock

1+ parts

$3.564

100+ parts

-

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$3.208

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699

$3.564

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$3.208

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MKK Technologies

India . 1,448 parts In-Stock

1+ parts

$6.702

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$6.702

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DigiPath Technology Company

USA . 1,448 parts In-Stock

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$6.702

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1,448

$6.702

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Corphita

USA . 5,303 parts In-Stock

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5,303

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Parana Technologies

USA . 276 parts In-Stock

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$4.261

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$4.261

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Overview

Elevate your designs with the M36LLR8760D1ZAQE from STMicroelectronics, a beacon of quality in memory solutions. This versatile flash and PSRAM hybrid delivers exceptional performance for diverse applications, from IoT devices to advanced computing systems. With its low-profile design and robust operating range, it ensures reliable operation in demanding environments. Trust in STMicroelectronics' legacy of innovation for enhanced efficiency and value in your projects!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides a reliable and durable package that can withstand various environmental conditions, ensuring product longevity.

Surface Mount: YES

Surface mount technology allows for a compact design and easier integration into modern circuit boards, which is essential for space-constrained applications.

Package Shape: RECTANGULAR

The rectangular shape of the package aids in efficient layout design, allowing for better board space utilization.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible data access without the need for clock synchronization, which can simplify system design.

Mixed Memory Type: FLASH+PSRAM

Combining FLASH and PSRAM in one chip offers improved performance and versatile memory solutions for a wide range of applications.

Nominal Supply Voltage / Vsup: 1.8 V

A nominal supply voltage of 1.8 V is ideal for power-sensitive applications, contributing to energy efficiency and lower heat generation.

Power Supplies (V): 1.8

The requirement for a 1.8 V power supply ensures compatibility with low-power devices, making it suitable for mobile and battery-operated applications.

No. of Terminals: 88

With 88 terminals, the device supports a wide range of data connections, enhancing its functionality and integration possibilities.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

The grid array low profile design minimizes the overall footprint while allowing for high pin density, making it ideal for space-constrained solutions.

Maximum Operating Temperature: 85 °C

Operating up to 85 °C ensures reliability in harsher environments, making it suitable for industrial and automotive applications.

Organization: 16MX16

An organization of 16M x 16 bits provides a balanced memory structure that can handle various data types efficiently.

Minimum Operating Temperature: -25 °C

With a minimum operating temperature of -25 °C, the device can function in colder environments, expanding its application range.

Terminal Finish: TIN SILVER COPPER

The tin-silver-copper finish enhances solderability and reliability in connections, ensuring better performance in assembly processes.

Terminal Position: BOTTOM

Bottom terminal positioning facilitates easier mounting on circuit boards, optimizing design efficiency.

Maximum Seated Height: 1.4 mm

A maximum seated height of 1.4 mm is advantageous for designs requiring compact components, reducing spatial requirements.

Width: 8 mm

At 8 mm wide, the design remains efficient and compact, making it suitable for modern electronic devices.

Minimum Supply Voltage (Vsup): 1.7 V

A low minimum supply voltage of 1.7 V allows for a wider range of operation over different devices and power conditions.

Length: 10 mm

The 10 mm length allows for effective placement within tight spaces, ensuring compatibility with compact designs.

Technology: CMOS

CMOS technology offers high-speed operation and low power consumption, making it suitable for a variety of applications from consumer electronics to industrial uses.

Terminal Form: BALL

Ball terminal form enhances the reliability of connections and allows for effective heat dissipation, crucial for performance.

Maximum Supply Current: 52 mA

A maximum supply current of 52 mA provides ample power for high-performance applications while maintaining efficiency.

No. of Words: 16777216 words

With 16,777,216 words of storage, this memory IC can handle substantial data loads, making it ideal for complex applications.

Memory Width: 16

A memory width of 16 bits balances performance and efficiency, suitable for diverse data handling requirements.

Terminal Pitch: 0.8 mm

The 0.8 mm terminal pitch allows for compact and dense layouts, fitting well into modern PCB designs.

No. of Words Code: 16M

Supporting a storage capacity of 16M words ensures it can meet substantial data processing and storage needs.

Maximum Supply Voltage (Vsup): 1.95 V

With a maximum supply voltage of 1.95 V, this IC can operate safely within a defined voltage range, enhancing stability and performance.

Memory Density: 268435456 bit

The high memory density of 268,435,456 bits offers significant data storage capabilities, suitable for high-performance applications.

Memory IC Type: MEMORY CIRCUIT

Categorized as a memory circuit, this IC is designed specifically for efficient data storage and retrieval, critical for demanding applications.

Maximum Standby Current: 0.00011 Amp

A maximum standby current of only 0.00011 A minimizes energy consumption in idle states, making it a green choice for energy-sensitive applications.

Technical Specifications

Other Function Memory ICs M36LLR8760D1ZAQE attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.00011 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

52 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36LLR8760D1ZAQE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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