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M36L0R7040T0ZAQT

STMicroelectronics

M36L0R7040T0ZAQT by STMicroelectronics

M36L0R7040T0ZAQT by STMicroelectronics is a versatile memory IC featuring 8M x 16 organization, operating at a nominal voltage of 1.8V. It combines FLASH and PSRAM in a compact grid array package, ideal for low-power applications. With an operating temp range of -25 °C to 85 °C, it suits various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,385 parts In-Stock

1+ parts

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4,385

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Digiode

USA . 2,298 parts In-Stock

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2,298

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Anansix

USA . 680 parts In-Stock

1+ parts

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680

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,786 parts In-Stock

1+ parts

$4.634

100+ parts

-

1k+ parts

$4.171

10k+ parts

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1,786

$4.634

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$4.171

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MKK Technologies

India . 494 parts In-Stock

1+ parts

$8.714

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494

$8.714

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DigiPath Technology Company

USA . 494 parts In-Stock

1+ parts

$8.714

100+ parts

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494

$8.714

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Corphita

USA . 1,980 parts In-Stock

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1,980

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Parana Technologies

USA . 934 parts In-Stock

1+ parts

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$5.541

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934

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$5.541

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Overview

Unlock unparalleled performance and reliability with the M36L0R7040T0ZAQT from STMicroelectronics. Renowned for its innovative solutions, STMicroelectronics delivers top-notch memory technology perfect for diverse applications— from consumer electronics to industrial automation. Enjoy the benefits of efficient power consumption and robust data integrity, ensuring your designs are future-ready and high-performing. Elevate your projects with a trusted leader in the semiconductor industry!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy enhances durability and provides a lightweight solution for various applications.

Surface Mount: YES

Surface mount technology allows for easier and more efficient integration into modern electronic designs.

Package Shape: RECTANGULAR

The rectangular shape provides optimized space utilization on printed circuit boards (PCBs), making it suitable for compact designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster data access without the need for clock synchronization, benefiting high-speed applications.

Mixed Memory Type: FLASH+PSRAM

Combining FLASH and PSRAM provides flexible memory solutions, accommodating both permanent storage and quick-access temporary data.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a low nominal supply voltage optimizes power consumption, making it ideal for battery-powered devices.

Power Supplies (V): 1.8

A consistent power supply requirement of 1.8 V facilitates easier integration into low-voltage systems.

No. of Terminals: 88

A higher number of terminals allows for more data lines and enhanced connectivity options for various applications.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The thin profile and fine pitch design are perfect for modern, space-constrained applications, providing flexibility in layout.

Maximum Operating Temperature: 85 °C

The ability to operate at high temperatures ensures reliability in demanding environments, such as automotive or industrial applications.

Organization: 8MX16

This specific organization provides a balance between capacity and access speed, making it versatile for various applications.

Minimum Operating Temperature: -25 °C

Low temperature operation ensures reliability in cold environments, making it suitable for outdoor or extreme weather applications.

Terminal Finish: TIN LEAD

Tin lead finish promotes good solderability, ensuring robust connections during assembly.

Terminal Position: BOTTOM

Bottom terminal position facilitates efficient PCB mounting and space-saving designs.

Maximum Seated Height: 1.2 mm

The low seated height allows for compact designs, making it suitable for slim electronic devices.

Width: 8 mm

A width of 8 mm helps fit into tighter spaces on PCBs without compromising performance.

Minimum Supply Voltage (Vsup): 1.7 V

The low minimum supply voltage ensures compatibility with a broader range of systems while optimizing power efficiency.

Length: 10 mm

A length of 10 mm provides a compact form factor, suitable for devices with limited space.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, ideal for energy-sensitive applications.

Terminal Form: BALL

Ball terminals enhance the reliability of connections, reducing the risk of failure over time.

Maximum Supply Current: 47 mA

A maximum supply current of 47 mA is manageable in low-power applications, preserving energy in battery-operated devices.

No. of Words: 8388608 words

With 8M words, this IC provides ample memory for data-intensive applications, ensuring efficient performance.

Memory Width: 16

A 16-bit memory width promotes faster data processing and transfer rates, beneficial for performance-sensitive applications.

Terminal Pitch: 0.8 mm

A 0.8 mm terminal pitch allows for high-density PCB designs, maximizing board space usage.

No. of Words Code: 8M

Having an 8M words code enhances compatibility with various data operations, improving overall system performance.

Maximum Supply Voltage (Vsup): 1.95 V

The maximum supply voltage of 1.95 V ensures flexibility in power supply options while enabling a wide range of applications.

Memory Density: 134217728 bit

High memory density allows for extensive data storage capabilities within a compact footprint.

Memory IC Type: MEMORY CIRCUIT

This classification as a memory circuit indicates it is specifically designed for storage applications, ensuring optimized performance in relevant tasks.

Maximum Standby Current: 0.00007 Amp

Ultra-low standby current minimizes power consumption during idle periods, making it suited for energy-efficient designs.

Technical Specifications

Other Function Memory ICs M36L0R7040T0ZAQT attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

PSRAM IS ORGANIZED AS 1M X 16

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e0

Length:

10 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00007 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

47 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36L0R7040T0ZAQT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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