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SN74ACT2153-22N

Texas Instruments

SN74ACT2153-22N by Texas Instruments

SN74ACT2153-22N by Texas Instruments is a 1KX12 MEMORY CIRCUIT IC with 12288 bit memory density. It operates at 5V, has a max access time of 22ns, and consumes up to 125mA. This CMOS technology IC is ideal for applications requiring fast memory access in commercial temperature environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,560 parts In-Stock

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9,560

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Digiode

USA . 974 parts In-Stock

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974

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Distributors (Availability)

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Parana Technologies

USA . 1,569 parts In-Stock

1+ parts

$3.842

100+ parts

-

1k+ parts

$4.327

10k+ parts

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1,569

$3.842

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$4.327

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IDEA Electronic Components Group

UK . 2,081 parts In-Stock

1+ parts

$4.317

100+ parts

-

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$3.885

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2,081

$4.317

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$3.885

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ChromeModa Solutions

Germany . 1,144 parts In-Stock

1+ parts

$4.317

100+ parts

$3.540

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1,144

$4.317

$3.540

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AZTECH Wire

Italy . 518 parts In-Stock

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$16.637

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518

$16.637

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One Stop Electronics

USA . 666 parts In-Stock

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$23.000

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666

$23.000

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Corphita

USA . 2,812 parts In-Stock

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2,812

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DigiPath Technology Company

USA . 1,703 parts In-Stock

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$3.892

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$3.892

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Overview

Enhance your electronic projects with the SN74ACT2153-22N by Texas Instruments, a top-quality memory circuit that offers unmatched reliability and performance. This versatile IC is perfect for a wide range of applications in various industries. With Texas Instruments' reputation for excellence, you can trust that this product will deliver exceptional value and benefits to meet your project requirements. Upgrade your designs with the SN74ACT2153-22N and experience the advantage of superior quality and innovation in every application.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides durability and protection to the memory IC, making it suitable for various applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard power supplies and makes integration into existing systems seamless.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this memory IC can withstand high-temperature environments without compromising its performance.

Memory Width: 12

A memory width of 12 bits allows for efficient storage and retrieval of data, making the memory IC suitable for applications requiring larger data processing capabilities.

Technology: CMOS

The use of CMOS technology ensures low power consumption and high noise immunity, making the memory IC energy efficient and reliable in various operating conditions.

Technical Specifications

Other Function Memory ICs SN74ACT2153-22N attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

22 ns

JESD-30 Code:

R-PDIP-T28

Memory Density:

12288 bit

Memory IC Type:

Memory Width:

12

No. of Terminals:

28

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX12

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.105 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

125 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SN74ACT2153-22N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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