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M36LLR8860D1ZAQF

STMicroelectronics

M36LLR8860D1ZAQF by STMicroelectronics

M36LLR8860D1ZAQF by STMicroelectronics is a low-profile, synchronous memory IC featuring 16M words of FLASH+PSRAM with a supply voltage range of 1.7-1.95V. It operates efficiently at temperatures from -25 °C to 85 °C and supports surface mount applications. Ideal for compact devices, it offers high-density storage in a small footprint.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,771 parts In-Stock

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Anansix

USA . 2,370 parts In-Stock

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Digiode

USA . 813 parts In-Stock

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IDEA Electronic Components Group

UK . 1,420 parts In-Stock

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$2.937

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$2.643

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MKK Technologies

India . 874 parts In-Stock

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$5.522

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DigiPath Technology Company

USA . 874 parts In-Stock

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$5.522

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874

$5.522

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Parana Technologies

USA . 2,086 parts In-Stock

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$3.511

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Corphita

USA . 1,858 parts In-Stock

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Overview

Unlock unparalleled performance with the M36LLR8860D1ZAQF from STMicroelectronics, a leader in innovation and reliability. This advanced memory IC combines FLASH and PSRAM in a compact, low-profile package, making it perfect for cutting-edge applications like IoT, automotive, and consumer electronics. Benefit from its efficient power management, wide operating temperature range, and seamless integration, ensuring your designs are not only powerful but also energy-conscious. Elevate your projects with ST’s proven quality and experience the future of memory solutions!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures reliability and protection against environmental factors, making it a suitable choice for diverse applications.

Surface Mount: YES

Surface mount capability allows for compact designs and efficient space utilization on circuit boards, enhancing overall system design flexibility.

Package Shape: RECTANGULAR

The rectangular package shape is optimized for efficient layout and integration in tight spaces, contributing to better design adaptability.

Operating Mode: SYNCHRONOUS

Synchronous operation improves data transfer rates and efficiency, making it ideal for high-speed applications.

Mixed Memory Type: FLASH+PSRAM

The combination of Flash and PSRAM provides versatility for data storage and processing, catering to a wide range of memory needs.

Nominal Supply Voltage / Vsup (V): 1.8

A low nominal voltage of 1.8V minimizes power consumption, making it suitable for battery-operated and power-sensitive applications.

Power Supplies (V): 1.8

Running on a single power supply of 1.8V simplifies design considerations and enhances power management efficiency.

No. of Terminals: 88

With 88 terminals, this IC offers extensive connectivity options for complex applications, ensuring flexibility in design.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

The low-profile and fine pitch grid array design allows for a compact footprint while maintaining high pin density, ideal for modern electronics.

Maximum Operating Temperature: 85 °C

A high maximum operating temperature ensures performance stability in harsh environments, making it suitable for automotive and industrial applications.

Organization: 16MX16

The 16MX16 organization facilitates efficient data handling and access, making it a solid choice for high-performance tasks.

Minimum Operating Temperature: -25 °C

The wide temperature range, down to -25 °C, ensures reliable operation in cold environments, broadening application possibilities.

Terminal Finish: TIN SILVER COPPER

The tin-silver-copper terminal finish enhances solderability and galvanic stability, ensuring long-term reliability in electrical connections.

Terminal Position: BOTTOM

Bottom terminal positioning aids in better thermal management and allows for efficient board layout, which is crucial in compact designs.

Maximum Seated Height: 1.4 mm

A low seated height of 1.4mm contributes to a thinner design profile, beneficial in space-constrained applications.

Width: 8 mm

An 8 mm width strikes a balance between adequate pin count and minimized footprint, fitting well in diverse applications.

Minimum Supply Voltage (Vsup): 1.7 V

Operating down to 1.7V allows for flexibility in power supply design, accommodating various system requirements.

Length: 10 mm

At 10 mm in length, this IC provides a compact solution without compromising functional performance, ideal for small devices.

Technology: CMOS

The use of CMOS technology ensures low power consumption and high noise immunity, essential for battery-operated applications.

Terminal Form: BALL

Ball terminal form facilitates easy assembly and improves mechanical stability on PCB, enhancing overall reliability.

Maximum Supply Current: 52 mA

With a maximum supply current of 52 mA, the IC is well-suited for high-performance applications requiring quick data access.

No. of Words: 16777216 words

The high word count of 16,777,216 provides ample storage for complex data requirements, making it perfect for advanced applications.

Memory Width: 16

A 16-bit memory width allows for efficient processing of data in mid-range applications, striking a balance between performance and complexity.

Terminal Pitch: 0.8 mm

The 0.8 mm terminal pitch enhances usability in compact designs while still allowing for effective soldering and connection reliability.

No. of Words Code: 16M

With a capability of handling 16 million words, this IC is equipped to meet the demands of modern data-intensive applications.

Maximum Supply Voltage (Vsup): 1.95 V

A maximum supply voltage of 1.95V offers a safe operating window, preventing damage while optimizing performance.

Memory Density: 268435456 bit

High memory density of 268,435,456 bits ensures that the product can support large amounts of data, making it suitable for demanding tasks.

Memory IC Type: MEMORY CIRCUIT

As a dedicated memory circuit, this IC is optimized for storage and access speeds, facilitating reliable and effective memory solutions.

Maximum Standby Current: 0.00011 Amp

A low maximum standby current of 0.00011 Amp minimizes power drain during inactivity, enhancing energy efficiency in applications.

Technical Specifications

Other Function Memory ICs M36LLR8860D1ZAQF attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

PSRAM ALSO ORGANIZED AS 4M X 16

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.00011 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

52 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36LLR8860D1ZAQF Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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