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M36LLR8760M1ZAQT

STMicroelectronics

M36LLR8760M1ZAQT by STMicroelectronics

M36LLR8760M1ZAQT by STMicroelectronics is a low-profile, asynchronous memory IC featuring 16M words of mixed FLASH+PSRAM. It operates at a nominal voltage of 1.8V and supports temperatures from -25 °C to 85 °C, ideal for compact electronic applications. With its fine-pitch grid array design, it ensures efficient space utilization in modern devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,556 parts In-Stock

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Anansix

USA . 2,084 parts In-Stock

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2,084

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Digiode

USA . 1,134 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 336 parts In-Stock

1+ parts

$2.936

100+ parts

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1k+ parts

$2.642

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336

$2.936

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$2.642

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MKK Technologies

India . 812 parts In-Stock

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$5.520

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$5.520

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DigiPath Technology Company

USA . 812 parts In-Stock

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$5.520

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812

$5.520

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Corphita

USA . 3,730 parts In-Stock

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3,730

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Parana Technologies

USA . 158 parts In-Stock

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$3.510

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$3.510

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Overview

Unlock unparalleled performance with the M36LLR8760M1ZAQT from STMicroelectronics, a leader in innovative semiconductor solutions. This advanced Flash+PSRAM memory IC is designed for efficiency and reliability, making it perfect for a wide range of applications—from IoT devices to automotive systems. Benefit from its low-power operation and robust temperature resilience, ensuring your projects run smoothly under any conditions. Elevate your designs with STMicroelectronics' commitment to quality and excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental factors, making the product reliable for various applications.

Surface Mount: YES

Surface mount capability allows for a compact design, enabling the integration of the IC into modern electronic devices with limited space.

Package Shape: RECTANGULAR

A rectangular package shape is efficient for layout in circuit boards, optimizing space utilization and connectivity with other components.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enables faster communication, providing quicker access to data, which is crucial in high-performance applications.

Mixed Memory Type: FLASH+PSRAM

Combining FLASH and PSRAM offers versatility and efficiency, suitable for applications that require both storage and quick access memory.

Nominal Supply Voltage / Vsup: 1.8 V

A nominal supply voltage of 1.8V is energy-efficient, making it ideal for battery-powered devices, which helps extend battery life.

Power Supplies (V): 1.8

Stable power requirements at 1.8V indicate low power consumption, contributing to the overall efficiency of the device.

No. of Terminals: 88

Having 88 terminals enhances connectivity options, facilitating integration into complex systems with multiple signal connections.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

A low profile grid array design minimizes the height of the component, while fine pitch allows for dense packing of circuits, saving space.

Maximum Operating Temperature: 85 °C

Operating at a maximum temperature of 85 °C makes this IC suitable for use in a wide range of environments, increasing its application scope.

Organization: 16MX16

The 16MX16 organization maximizes memory efficiency and enables the storage of larger datasets which is important for advanced computing needs.

Minimum Operating Temperature: -25 °C

A minimum operating temperature of -25 °C allows for reliable performance in cold environments, enhancing product versatility.

Terminal Finish: TIN LEAD

Tin-lead terminal finish provides better solderability and reliability during assembly, ensuring a more stable connection.

Terminal Position: BOTTOM

Bottom terminal position facilitates efficient heat dissipation and quality manufacturing integration in PCBs.

Maximum Seated Height: 1.4 mm

With a maximum seated height of just 1.4 mm, this IC maintains a low profile that accommodates space-constrained applications.

Width: 8 mm

An 8 mm width makes it compatible with a variety of circuit layouts, enhancing flexibility in design.

Minimum Supply Voltage: 1.7 V

Operating at a minimum voltage of 1.7V ensures compatibility with a range of power systems, supporting diverse applications.

Length: 10 mm

A compact length of 10 mm facilitates ease of integration into smaller devices and modules.

Technology: CMOS

CMOS technology offers low power consumption and high-density integration, making it optimal for modern electronics.

Terminal Form: BALL

Ball terminal form ensures robust connections and simplifies soldering processes for assembly.

Maximum Supply Current: 52 mA

A maximum supply current of 52mA indicates efficient power usage, permitting prolonged operation in portable devices.

No. of Words: 16777216 words

With 16,777,216 words of memory, this IC supports substantial data storage, making it suitable for applications requiring extensive memory.

Memory Width: 16

A memory width of 16 bits facilitates fast data processing, ensuring quicker read and write cycles in applications.

Terminal Pitch: 0.8 mm

An 0.8 mm terminal pitch allows for efficient and secure connections, promoting high-density layouts on circuit boards.

No. of Words Code: 16M

The '16M' coding indicates a substantial capacity for data, ensuring the IC is suitable for memory-intensive applications.

Maximum Supply Voltage: 1.95 V

A maximum supply voltage of 1.95V provides a safe operational range, ensuring reliable performance across various conditions.

Memory Density: 268435456 bit

With a memory density of 268,435,456 bits, this IC offers extensive data storage capabilities, suitable for complex applications.

Memory IC Type: MEMORY CIRCUIT

As a memory circuit type, it delivers essential data management for processing in various electronic applications.

Maximum Standby Current: 0.00011 Amp

A maximum standby current of only 0.00011A indicates excellent energy efficiency, making this IC ideal for low-power and battery-driven devices.

Technical Specifications

Other Function Memory ICs M36LLR8760M1ZAQT attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e0

Length:

10 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.00011 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

52 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36LLR8760M1ZAQT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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