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M36L0R7050B0ZAQT

STMicroelectronics

M36L0R7050B0ZAQT by STMicroelectronics

M36L0R7050B0ZAQT by STMicroelectronics is a versatile memory IC featuring 8M x 16 organization, operating at a nominal voltage of 1.8V. It supports asynchronous operation with mixed FLASH+PSRAM technology and operates b/w -25 °C to 85 °C. Ideal for compact applications, it comes in a thin profile grid array package with 88 terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,139 parts In-Stock

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Digiode

USA . 1,863 parts In-Stock

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1,863

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Anansix

USA . 1,703 parts In-Stock

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1,703

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 126 parts In-Stock

1+ parts

$4.847

100+ parts

-

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$4.363

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126

$4.847

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$4.363

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MKK Technologies

India . 507 parts In-Stock

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$9.115

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507

$9.115

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DigiPath Technology Company

USA . 507 parts In-Stock

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$9.115

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507

$9.115

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Corphita

USA . 4,335 parts In-Stock

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4,335

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Parana Technologies

USA . 1,097 parts In-Stock

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$5.796

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1,097

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$5.796

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Overview

Unlock unparalleled performance with the M36L0R7050B0ZAQT from STMicroelectronics, a leading innovator in memory solutions. This versatile Flash+PSRAM memory IC excels in demanding applications, offering high-density storage and efficient power consumption. Its compact design ensures seamless integration, making it perfect for consumer electronics, IoT devices, and more. Experience reliability and quality backed by STMicroelectronics’ expertise, delivering exceptional value to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental factors, making the IC reliable in various applications.

Surface Mount: YES

Surface mount technology allows for compact designs and efficient space utilization on PCBs, making it suitable for modern electronic devices.

Package Shape: RECTANGULAR

The rectangular shape offers a standard form factor that simplifies integration into existing systems and layouts.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enables quicker access times and flexibility in design, enhancing overall system performance.

Mixed Memory Type: FLASH+PSRAM

Combining FLASH and PSRAM provides the benefits of non-volatility along with high-speed data access, suitable for various applications.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a low nominal supply voltage optimizes power consumption, making it energy-efficient and suitable for battery-operated devices.

Power Supplies (V): 1.8

A stable power supply at 1.8V contributes to lower energy costs and enhances battery life in portable applications.

No. of Terminals: 88

With 88 terminals, this IC facilitates connectivity and allows for complex configurations in compact designs.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

This style allows for better thermal dissipation and a smaller footprint, making it ideal for high-density applications.

Maximum Operating Temperature: 85 °C

The ability to operate at high temperatures ensures reliability in demanding environments.

Organization: 8MX16

This configuration offers a balance between capacity and performance, making it functional for a variety of memory-intensive applications.

Minimum Operating Temperature: -25 °C

Capabilities to perform in low temperatures expand the IC's usability in diverse environments and applications.

Terminal Finish: TIN LEAD

Tin lead finish provides excellent solderability and corrosion resistance, ensuring longevity of connections.

Terminal Position: BOTTOM

Bottom terminal positioning can streamline connections and reduce the overall package height, optimizing PCB layout.

Maximum Seated Height: 1.2 mm

A low seated height can lead to dynamic designs with minimal impact on overall device thickness.

Width: 8 mm

Compact width ensures compatibility with tight spaces in modern electronic assemblies.

Minimum Supply Voltage (Vsup): 1.7 V

A lower threshold for supply voltage increases versatility in design and makes the IC suitable for a variety of power sources.

Length: 10 mm

Moderate length allows for efficient use of space on PCBs while providing necessary functionality.

Technology: CMOS

CMOS technology offers low power consumption and high speed, contributing to the efficiency and performance of the IC.

Terminal Form: BALL

Ball terminals provide reliable connections and are optimized for high-density layouts.

Maximum Supply Current: 47 mA

Efficient current specifications minimize heat generation and contribute to overall energy efficiency in electronic devices.

No. of Words: 8388608 words

Offering substantial memory capacity, it supports data-heavy applications like multimedia and networking.

Memory Width: 16

A 16-bit memory width ensures a balance between data throughput and storage efficiency.

Terminal Pitch: 0.8 mm

A fine terminal pitch allows for high-density mounting, making it useful in compact electronic applications.

No. of Words Code: 8M

This designation reflects a significant capacity for data storage, suitable for a variety of applications.

Maximum Supply Voltage (Vsup): 1.95 V

The ability to accommodate a range of supply voltages enhances the compatibility with different power supply systems.

Memory Density: 134217728 bit

High memory density is advantageous for applications requiring substantial data storage in limited space.

Memory IC Type: MEMORY CIRCUIT

Being a dedicated memory circuit, it is optimized for performance in storage applications, ensuring reliability.

Maximum Standby Current: 0.00007 Amp

Ultra-low standby current contributes to overall energy savings, essential for battery-operated devices.

Technical Specifications

Other Function Memory ICs M36L0R7050B0ZAQT attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

PSRAM IS ORGANIZED AS 2M X 16

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e0

Length:

10 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00007 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

47 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36L0R7050B0ZAQT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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