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TMS2716-20JL

Texas Instruments

TMS2716-20JL by Texas Instruments

TMS2716-20JL by Texas Instruments is a 2Kx8 MOS memory IC with 16384-bit density. It features 3-STATE output, 200ns access time, and operates b/w 0°C to 70°C. Ideal for commercial applications requiring fast data retrieval in devices with through-hole mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,964 parts In-Stock

1+ parts

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5,964

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Digiode

USA . 3,360 parts In-Stock

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3,360

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,660 parts In-Stock

1+ parts

$4.447

100+ parts

-

1k+ parts

$4.876

10k+ parts

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1,660

$4.447

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$4.876

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DigiPath Technology Company

USA . 1,148 parts In-Stock

1+ parts

$4.897

100+ parts

$4.505

1k+ parts

-

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1,148

$4.897

$4.505

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ChromeModa Solutions

Germany . 3,519 parts In-Stock

1+ parts

$4.997

100+ parts

$4.098

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-

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3,519

$4.997

$4.098

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IDEA Electronic Components Group

UK . 627 parts In-Stock

1+ parts

$4.997

100+ parts

-

1k+ parts

$4.497

10k+ parts

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627

$4.997

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$4.497

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AZTECH Wire

Italy . 579 parts In-Stock

1+ parts

$14.452

100+ parts

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579

$14.452

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One Stop Electronics

USA . 1,117 parts In-Stock

1+ parts

$23.000

100+ parts

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1,117

$23.000

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Corphita

USA . 1,992 parts In-Stock

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1,992

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Overview

Elevate your electronics with the TMS2716-20JL by Texas Instruments, a top-quality memory IC that offers unparalleled performance and reliability. Crafted by a trusted manufacturer in the industry, this versatile component is ideal for a wide range of applications. With its advanced technology and 3-STATE output characteristics, the TMS2716-20JL delivers exceptional value and efficiency to customers seeking high-quality memory solutions. Upgrade your devices today with the TMS2716-20JL and experience the benefits of superior quality and performance.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides excellent heat resistance and thermal conductivity, making it suitable for high-temperature applications.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space in electronic circuits and setups.

No. of Terminals: 24

Sufficient number of terminals for connecting the memory IC with other components in a circuit.

Package Style (Meter): IN-LINE

In-line package style is easy to integrate into existing circuit designs.

Maximum Operating Temperature: 70 °C

Operating temperature range allows for reliable performance in various environments.

Organization: 2KX8

Organized in 2Kx8 configuration for efficient storage and retrieval of data.

Output Characteristics: 3-STATE

3-state output allows for high flexibility in controlling and sharing the data bus.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature ensures functionality even in colder conditions.

Terminal Position: DUAL

Dual terminal position provides redundancy and flexibility in circuit connection.

Temperature Grade: COMMERCIAL

Commercial temperature grade ensures compatibility with standard operating conditions in commercial applications.

Technology: MOS

MOS technology offers low power consumption and high speed performance.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure mechanical connection to the circuit board.

No. of Words: 2048 words

Sufficient memory capacity for storing data and instructions in the device.

Memory Width: 8

8-bit memory width allows for efficient data processing and retrieval.

Terminal Pitch: 2.54 mm

Standard terminal pitch for easy integration into PCB designs.

No. of Words Code: 2K

2K word code simplifies addressing and accessing specific memory locations.

Memory Density: 16384 bit

High memory density allows for storage of large amounts of data in a compact form factor.

Maximum Access Time: 200 ns

Fast access time ensures quick retrieval of data from memory.

Technical Specifications

Other Function Memory ICs TMS2716-20JL attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

200 ns

JESD-30 Code:

R-XDIP-T24

Memory Density:

16384 bit

Memory Width:

8

No. of Terminals:

24

No. of Words:

2048 words

No. of Words Code:

2K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Sub-Category:

Other Memory ICs

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

TMS2716-20JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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