Loading...

M36W216TI70ZA6

STMicroelectronics

M36W216TI70ZA6 by STMicroelectronics

M36W216TI70ZA6 by STMicroelectronics is a low-profile, asynchronous memory IC featuring 16Mbit density with mixed FLASH+SRAM technology. It operates b/w -40 °C to 85 °C and supports a supply voltage of 2.7V to 3.3V. Ideal for industrial applications requiring compact, reliable memory solutions.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,989 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,989

-

-

-

-

Vyrian

USA . 2,178 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,178

-

-

-

-

Anansix

USA . 644 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

644

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,992 parts In-Stock

1+ parts

$2.234

100+ parts

-

1k+ parts

$2.010

10k+ parts

-

1,992

$2.234

-

$2.010

-

MKK Technologies

India . 1,166 parts In-Stock

1+ parts

$4.200

100+ parts

-

1k+ parts

-

10k+ parts

-

1,166

$4.200

-

-

-

DigiPath Technology Company

USA . 1,166 parts In-Stock

1+ parts

$4.200

100+ parts

-

1k+ parts

-

10k+ parts

-

1,166

$4.200

-

-

-

Corphita

USA . 3,450 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,450

-

-

-

-

Parana Technologies

USA . 1,025 parts In-Stock

1+ parts

-

100+ parts

$2.671

1k+ parts

-

10k+ parts

-

1,025

-

$2.671

-

-

Overview

Unlock the future of memory solutions with the M36W216TI70ZA6 from STMicroelectronics, a leader in cutting-edge technology. This high-performance memory IC combines the reliability of FLASH and SRAM, ensuring swift data access and exceptional durability for various applications, from consumer electronics to industrial automation. With robust temperature tolerance and low power consumption, it delivers unmatched value, empowering your designs with efficiency and innovation. Choose STMicroelectronics for superior quality and trust in every byte!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and resistance to environmental factors, making the IC reliable for various applications.

Surface Mount: YES

Being a surface mount device allows for a compact design, which is ideal for modern electronics with limited space.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space efficiency on the PCB layout, enhancing the overall design flexibility.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for simpler integration into systems, ensuring faster response times and improved performance.

Mixed Memory Type: FLASH+SRAM

The combination of FLASH and SRAM provides both speed and non-volatility, making it versatile for applications requiring fast access and data retention.

Nominal Supply Voltage / Vsup: 3V

The nominal supply voltage of 3V aligns well with common power supply levels in many electronic devices, ensuring compatibility.

Power Supplies (V): 3

Support for a single power supply simplifies design and reduces the number of required external components.

No. of Terminals: 66

With 66 terminals, this IC provides ample connections for signal and power, enabling robust functionality in diverse applications.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

The grid array and fine pitch design improves signal integrity and allows for high-density mounting, crucial for advanced electronic designs.

Maximum Operating Temperature: 85 °C

The maximum operating temperature of 85 °C makes it suitable for industrial environments, enhancing durability and longevity.

Organization: 1MX16

An organization of 1MX16 provides a well-structured data format, optimizing memory access and storage efficiency.

Minimum Operating Temperature: -40 °C

The ability to operate at -40 °C ensures reliability in extreme conditions, making it ideal for outdoor or harsh applications.

Terminal Finish: Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

This terminal finish enhances solderability and corrosion resistance, improving the overall reliability of the connections.

Terminal Position: BOTTOM

Bottom terminal positioning optimizes space usage and allows for better thermal management in compact designs.

Maximum Seated Height: 1.4 mm

A low seated height contributes to the low-profile design, essential for miniaturized electronics.

Width: 8 mm

The 8 mm width enhances layout flexibility, accommodating various PCB designs and form factors.

Minimum Supply Voltage (Vsup): 2.7V

A minimum supply voltage of 2.7V ensures adaptability to various supply conditions, enhancing compatibility.

Length: 12 mm

The compact length of 12 mm supports space-efficient designs, ideal for consumer electronics and portable devices.

Temperature Grade: INDUSTRIAL

Industrial temperature grade ensures the product is robust and reliable in demanding environments, suitable for critical applications.

Technology: CMOS

CMOS technology provides low power consumption and high-speed operation, essential for energy-efficient designs.

Terminal Form: BALL

Ball terminal form enhances the mechanical stability and provides effective heat dissipation, ensuring reliable performance.

Maximum Supply Current: 20 mA

A maximum supply current of 20 mA allows for efficient power management, reducing overall energy consumption.

No. of Words: 1048576 words

With 1,048,576 words, this IC offers substantial memory capacity for a variety of applications requiring significant data storage.

Memory Width: 16

A memory width of 16 bits enables efficient data transfer and processing, making it suitable for a wide range of computing tasks.

Terminal Pitch: 0.8 mm

A terminal pitch of 0.8 mm allows for tight spacing, enabling high-density designs that meet modern electronic demands.

No. of Words Code: 1M

The 1M word code confirms ample storage capabilities, ensuring versatility for various applications.

Maximum Supply Voltage (Vsup): 3.3V

A maximum supply voltage of 3.3V ensures the device operates effectively within standard voltage ranges, promoting design compatibility.

Memory Density: 16777216 bit

A memory density of 16,777,216 bits allows for extensive data storage and processing capabilities, ideal for complex applications.

Memory IC Type: MEMORY CIRCUIT

As a memory circuit, it is designed specifically for data storage needs, making it a reliable choice for memory-intensive applications.

Maximum Standby Current: 0.00001 Amp

A very low maximum standby current enhances energy efficiency, crucial for battery-operated devices and energy-sensitive applications.

Maximum Access Time: 70 ns

With a maximum access time of 70 ns, the IC ensures fast read/write operations, supporting high-performance electronic systems.

Technical Specifications

Other Function Memory ICs M36W216TI70ZA6 attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

STATIC RAM ORGANISED AS 128KBIT X 16

JESD-30 Code:

R-PBGA-B66

JESD-609 Code:

e1

Length:

12 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

66

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA66,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.00001 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.3 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36W216TI70ZA6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20