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SN74HC670FH

Texas Instruments

SN74HC670FH by Texas Instruments

SN74HC670FH by Texas Instruments is a CMOS memory IC with 20 terminals in a square chip carrier package. It operates b/w -40 to 85°C, suitable for industrial applications. With power supplies ranging from 2V to 6V, it is ideal for surface mount designs requiring reliable memory functions.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,297 parts In-Stock

1+ parts

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4,297

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Digiode

USA . 2,602 parts In-Stock

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2,602

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Distributors (Availability)

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Parana Technologies

USA . 281 parts In-Stock

1+ parts

$2.499

100+ parts

-

1k+ parts

$2.990

10k+ parts

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281

$2.499

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$2.990

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DigiPath Technology Company

USA . 1,611 parts In-Stock

1+ parts

$2.752

100+ parts

$2.532

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1,611

$2.752

$2.532

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ChromeModa Solutions

Germany . 3,288 parts In-Stock

1+ parts

$2.808

100+ parts

$2.303

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3,288

$2.808

$2.303

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IDEA Electronic Components Group

UK . 1,246 parts In-Stock

1+ parts

$2.808

100+ parts

-

1k+ parts

$2.527

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1,246

$2.808

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$2.527

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One Stop Electronics

USA . 1,442 parts In-Stock

1+ parts

$18.000

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1,442

$18.000

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AZTECH Wire

Italy . 865 parts In-Stock

1+ parts

$18.849

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865

$18.849

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Corphita

USA . 2,346 parts In-Stock

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2,346

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Overview

Looking for a reliable solution for function memory ICs? Look no further than the SN74HC670FH by Texas Instruments. With a reputation for quality and reliability, Texas Instruments delivers cutting-edge technology in a compact chip carrier package. Perfect for industrial applications, this IC offers a wide operating temperature range and low power consumption. Trust Texas Instruments to provide you with the best value and performance for all your memory IC needs. Upgrade your systems today with the SN74HC670FH.

Feature Benefit Bullets

Package Body Material: CERAMIC

The ceramic package body material provides excellent thermal conductivity and stability, making it ideal for applications that require high performance and reliability.

Surface Mount: YES

Being surface mountable allows for easier and more efficient assembly on circuit boards, saving time and resources during production.

Package Shape: SQUARE

The square package shape helps in optimizing space on the circuit board and allows for more efficient layout designs.

Power Supplies (V): 2/6

This memory IC is versatile and can operate at a wide range of power supply voltages, making it suitable for various applications.

No. of Terminals: 20

Having more terminals provides greater connectivity options and flexibility in designing circuits that require multiple input/output connections.

Package Style (Meter): CHIP CARRIER

The chip carrier package style offers better protection and handling of the IC, ensuring its longevity and reliability in use.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this IC can withstand harsh environmental conditions and operate reliably in industrial settings.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures that the IC can function effectively even in extreme cold environments, making it versatile for various applications.

Terminal Position: QUAD

The quad-terminal position allows for easy connection and installation, improving the overall user experience and ease of integration into electronic systems.

Temperature Grade: INDUSTRIAL

Being rated for industrial temperature grades ensures that this memory IC can meet the demanding requirements of industrial applications, providing reliable performance under tough conditions.

Technology: CMOS

CMOS technology offers low power consumption, high speed, and compatibility with a wide range of devices, making this memory IC efficient and versatile for various applications.

Terminal Form: NO LEAD

The no-lead terminal form reduces the risk of solder joint failure and improves the overall reliability of the IC in demanding operating conditions.

Terminal Pitch: 1.27 mm

The 1.27mm terminal pitch allows for precise and reliable connections, making assembly and integration into circuits more efficient and effective.

Technical Specifications

Other Function Memory ICs SN74HC670FH attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-XQCC-N20

No. of Terminals:

20

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

CERAMIC

Package Code:

Package Equivalence Code:

LCC20,.35SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Power Supplies (V):

2/6

Qualification:

Not Qualified

Sub-Category:

Other Memory ICs

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Trade Compliance

SN74HC670FH Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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