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TM4161EM4-20L

Texas Instruments

TM4161EM4-20L by Texas Instruments

TM4161EM4-20L by Texas Instruments is a 64KX4 VIDEO DRAM with 262144 bit memory density. It operates at -0 to 70 °C, with a max access time of 200 ns. Ideal for applications requiring high-speed video data processing in commercial-grade environments.

Median Price

$3.209

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 52 parts In-Stock

1+ parts

$3.209

100+ parts

-

1k+ parts

-

10k+ parts

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52

$3.209

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Vyrian

USA . 5,694 parts In-Stock

1+ parts

-

100+ parts

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5,694

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Digiode

USA . 1,583 parts In-Stock

1+ parts

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1,583

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,455 parts In-Stock

1+ parts

$3.697

100+ parts

-

1k+ parts

$4.199

10k+ parts

-

1,455

$3.697

-

$4.199

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DigiPath Technology Company

USA . 790 parts In-Stock

1+ parts

$4.071

100+ parts

$3.745

1k+ parts

-

10k+ parts

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790

$4.071

$3.745

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-

ChromeModa Solutions

Germany . 6,518 parts In-Stock

1+ parts

$4.154

100+ parts

$3.406

1k+ parts

-

10k+ parts

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6,518

$4.154

$3.406

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IDEA Electronic Components Group

UK . 1,259 parts In-Stock

1+ parts

$4.154

100+ parts

-

1k+ parts

$3.739

10k+ parts

-

1,259

$4.154

-

$3.739

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AZTECH Wire

Italy . 273 parts In-Stock

1+ parts

$15.092

100+ parts

-

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273

$15.092

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One Stop Electronics

USA . 1,184 parts In-Stock

1+ parts

$16.000

100+ parts

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1,184

$16.000

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Corphita

USA . 105 parts In-Stock

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105

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Overview

Unleash the power of cutting-edge technology with the TM4161EM4-20L by Texas Instruments. Crafted with precision and expertise, this memory IC sets a new standard in performance and reliability. Perfect for a wide range of applications, from video processing to data storage, this product offers unmatched value and versatility. Stay ahead of the curve with Texas Instruments and experience the benefits of top-quality components that deliver exceptional results every time. Elevate your projects with the TM4161EM4-20L and take your innovation to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of PLASTIC/EPOXY as the package body material provides a cost-effective and durable solution for the memory IC.

No. of Terminals: 31

Having 31 terminals allows for efficient connectivity and integration of the memory IC within different devices or systems.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature of 70 °C, this memory IC can withstand demanding temperature conditions without sacrificing performance.

Organization: 64KX4

The 64KX4 organization ensures efficient data storage and retrieval, making this memory IC suitable for various applications.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature of 0 °C ensures that the memory IC can perform reliably even in colder environments.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection of the memory IC, reducing complexity in the overall design.

Technology: MOS

MOS technology offers low power consumption and high speed performance, making this memory IC energy-efficient and responsive.

Memory Density: 262144 bit

With a high memory density of 262144 bit, this memory IC can store a large amount of data efficiently, making it ideal for memory-intensive applications.

Memory IC Type: VIDEO DRAM

Being a VIDEO DRAM type memory IC, it is optimized for video processing tasks, offering smooth and high-quality graphics performance.

Maximum Access Time: 200 ns

The fast maximum access time of 200 ns ensures quick data retrieval, reducing latency and improving overall system responsiveness.

Technical Specifications

Other Function Memory ICs TM4161EM4-20L attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

200 ns

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

4

No. of Terminals:

31

No. of Words:

65536 words

No. of Words Code:

64K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX4

Package Body Material:

PLASTIC/EPOXY

Package Equivalence Code:

SIP31,.2

Qualification:

Not Qualified

Sub-Category:

Other Memory ICs

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Pitch:

2.54 mm

Terminal Position:

SINGLE

Trade Compliance

TM4161EM4-20L Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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