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SN74AS871N3

Texas Instruments

SN74AS871N3 by Texas Instruments

SN74AS871N3 by Texas Instruments is a TTL technology IC with 28 terminals in an IN-LINE package. It operates b/w 0°C to 70°C, making it suitable for commercial applications. With a rectangular plastic/epoxy body, it is commonly used in other function memory circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,317 parts In-Stock

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Vyrian

USA . 2,111 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 829 parts In-Stock

1+ parts

$4.395

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$4.811

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829

$4.395

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$4.811

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DigiPath Technology Company

USA . 1,667 parts In-Stock

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$4.839

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$4.452

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$4.839

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IDEA Electronic Components Group

UK . 2,098 parts In-Stock

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$4.938

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$4.444

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$4.938

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$4.444

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ChromeModa Solutions

Germany . 1,462 parts In-Stock

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$4.938

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$4.049

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$4.938

$4.049

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AZTECH Wire

Italy . 799 parts In-Stock

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$5.297

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$5.297

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One Stop Electronics

USA . 1,123 parts In-Stock

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$23.000

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Corphita

USA . 2,963 parts In-Stock

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Overview

Unlock new possibilities with the SN74AS871N3 by Texas Instruments, a cutting-edge Other Function Memory IC designed to exceed your expectations. With Texas Instruments' renowned reputation for quality and innovation, this product offers unparalleled reliability and performance. Whether you're in need of memory expansion or data storage solutions, this versatile component is perfect for a wide range of applications. Experience the value and benefits of choosing Texas Instruments and elevate your projects to the next level with the SN74AS871N3.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body provides durability and protection to the internal components of the memory IC, ensuring a longer lifespan.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of space on circuit boards, making it easier to integrate the memory IC into various electronic devices.

No. of Terminals: 28

Having a higher number of terminals allows for more connectivity options and versatility in the applications where the memory IC can be used.

Package Style (Meter): IN-LINE

The in-line package style simplifies the installation and assembly process of the memory IC, making it user-friendly for manufacturers.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this memory IC can withstand higher temperatures, providing reliability in different operating environments.

Minimum Operating Temperature: 0 °C

The ability to operate at temperatures as low as 0°C ensures that the memory IC can function effectively in a wide range of temperature conditions.

Terminal Position: DUAL

The dual terminal position allows for better stability and connectivity, reducing the risk of signal interference or loss within the memory IC.

Temperature Grade: COMMERCIAL

Being classified as commercial grade ensures that this memory IC meets industry standards for reliability and performance in everyday electronic devices.

Technology: TTL

Using TTL technology in this memory IC results in faster data processing speeds and lower power consumption, making it an efficient choice for memory storage.

Terminal Form: THROUGH-HOLE

The through-hole terminal form makes it easier to solder and install the memory IC onto circuit boards, providing a secure and stable connection.

Terminal Pitch: 2.54 mm

The 2.54 mm terminal pitch allows for easy mounting and integration of the memory IC with standard spacing, enabling compatibility with a wide range of electronic devices.

Technical Specifications

Other Function Memory ICs SN74AS871N3 attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-PDIP-T28

No. of Terminals:

28

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Sub-Category:

Other Memory ICs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SN74AS871N3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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