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SN74ACT2151-22FN

Texas Instruments

SN74ACT2151-22FN by Texas Instruments

SN74ACT2151-22FN by Texas Instruments is a 1Kx12 MEMORY CIRCUIT IC with 22ns access time, operating at 5V. It comes in a PLASTIC/EPOXY chip carrier package with 28 terminals and J BEND terminal form. Ideal for applications requiring fast memory access in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,585 parts In-Stock

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4,585

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Vyrian

USA . 3,319 parts In-Stock

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3,319

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A2Z Electronics, Inc.

USA . 1,628 parts In-Stock

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1,628

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Bristol Electronics

USA . 374 parts In-Stock

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374

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Distributors (Availability)

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Parana Technologies

USA . 596 parts In-Stock

1+ parts

$4.760

100+ parts

-

1k+ parts

$5.264

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596

$4.760

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$5.264

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ChromeModa Solutions

Germany . 5,126 parts In-Stock

1+ parts

$5.348

100+ parts

$4.385

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5,126

$5.348

$4.385

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IDEA Electronic Components Group

UK . 1,642 parts In-Stock

1+ parts

$5.348

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$4.813

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1,642

$5.348

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$4.813

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AZTECH Wire

Italy . 670 parts In-Stock

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$10.097

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670

$10.097

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One Stop Electronics

USA . 189 parts In-Stock

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$28.000

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189

$28.000

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DigiPath Technology Company

USA . 1,071 parts In-Stock

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$4.822

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1,071

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$4.822

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Corphita

USA . 769 parts In-Stock

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769

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Overview

Unlock the potential of your electronic devices with the SN74ACT2151-22FN from Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-notch quality and reliability in their products. The SN74ACT2151-22FN falls into the category of Other Function Memory ICs, offering a wide range of applications for various electronics. With a nominal supply voltage of 5V and a maximum access time of 22ns, this memory circuit chip carrier provides high performance and efficiency. Trust Texas Instruments to deliver cutting-edge technology that meets your needs. Experience the value and benefits of the SN74ACT2151-22FN today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ensuring long-term reliability.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on circuit boards, saving space and simplifying assembly.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard supply voltage of 5V, making it compatible with many existing systems and easy to integrate.

Package Style (Meter): CHIP CARRIER

The chip carrier package style provides protection for the delicate components inside while also allowing for easy replacement if needed.

No. of Words: 1024 words

With a large capacity of 1024 words, this memory IC is suitable for storing a significant amount of data for various applications.

Maximum Access Time: 22 ns

The fast access time of 22 ns ensures quick retrieval of data, making this memory IC ideal for high-speed operations.

Technical Specifications

Other Function Memory ICs SN74ACT2151-22FN attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

22 ns

JESD-30 Code:

S-PQCC-J28

Memory Density:

12288 bit

Memory IC Type:

Memory Width:

12

No. of Terminals:

28

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX12

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC28,.5SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.105 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

125 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SN74ACT2151-22FN Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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